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    Semiconductor device and method for fabricating the same
    2.
    发明授权
    Semiconductor device and method for fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07564133B2

    公开(公告)日：2009-07-21

    申请号：US11396645

    申请日：2006-04-04

    申请人： Masakazu Hamada ,  Kazuyoshi Maekawa ,  Kenichi Mori

    发明人： Masakazu Hamada ,  Kazuyoshi Maekawa ,  Kenichi Mori

    IPC分类号： H01L23/40

    CPC分类号： H01L21/76865 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76843

    摘要： A semiconductor device comprises: a lower interconnect formed over a semiconductor substrate; an insulating film formed on the lower interconnect; a via hole penetrating the insulating film to reach the lower interconnect; a first barrier film covering bottom and side surfaces of the via hole; and a metal film filling the via hole covered with the first barrier film. A portion of the first barrier film covering a lower end of the side surface of the via hole is thicker than a portion covering the bottom surface of the via hole.

    摘要翻译： 半导体器件包括：形成在半导体衬底上的下部互连; 形成在下互连上的绝缘膜; 通孔穿过绝缘膜以到达下互连; 覆盖所述通孔的底面和侧面的第一阻挡膜; 以及填充由第一阻挡膜覆盖的通孔的金属膜。 覆盖通孔侧面的下端的第一阻挡膜的一部分比覆盖通孔底面的部分厚。

    Method of polishing
    4.
    发明授权
    Method of polishing 失效
    抛光方法

    公开(公告)号：US5083401A

    公开(公告)日：1992-01-28

    申请号：US315414

    申请日：1989-02-23

    申请人： Mikio Yamashita ,  Shigekazu Hara ,  Hiroyuki Matsunaga ,  Tooru Mamiya ,  Masakazu Hamada

    发明人： Mikio Yamashita ,  Shigekazu Hara ,  Hiroyuki Matsunaga ,  Tooru Mamiya ,  Masakazu Hamada

    IPC分类号： B24B7/22 ,  B24B37/04 ,  B24B49/16

    CPC分类号： B24B37/04 ,  B24B49/16 ,  B24B7/228

    摘要： A rotor is formed by rotationally cutting a metal mass mounted on a machine tool shaft under computer control, and also its outer periphery is formed with annular grooves by rotational cutting. The rotor is rotated on a shaft while feeding an abrasive to it, while a workpiece set on a stage movable along three perpendicular axes, i.e., X-, Y and Z-axes, urged against the rotor by moving the stage in the Z-axis direction. The surface of the workpiece is polished by causing the stage to be moved in the X-axis direction and reciprocated in the Y-axis direction, the urging pressure being controlled by measuring it with a pressure sensor.

    摘要翻译： 通过在计算机控制下旋转地切割安装在机床轴上的金属块而形成转子，并且其外周通过旋转切割形成有环形槽。 当沿着三个垂直轴线（即，X，Y和Z轴）移动的台架上的工件设置在轴上时，转子在轴上旋转，同时通过移动Z轴中的平台来推动转子， 轴方向。 通过使台架在X轴方向上移动并沿Y轴方向往复运动来抛光工件的表面，通过用压力传感器测量推压力来控制施力压力。

    Semiconductor device and manufacturing method therof
    5.
    发明申请
    Semiconductor device and manufacturing method therof 审中-公开
    半导体器件及制造方法

    公开(公告)号：US20070145591A1

    公开(公告)日：2007-06-28

    申请号：US11646432

    申请日：2006-12-28

    申请人： Hisashi Yano ,  Masakazu Hamada ,  Kazuyoshi Maekawa ,  Kenichi Mori

    发明人： Hisashi Yano ,  Masakazu Hamada ,  Kazuyoshi Maekawa ,  Kenichi Mori

    IPC分类号： H01L23/52

    CPC分类号： H01L21/76886 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor device manufacturing method includes the steps of: applying a first wire including a barrier metal film, a seed film, and a wiring material film in a first wire trench formed in a first interlayer dielectric film; after a second interlayer dielectric film is formed on the first interlayer dielectric film, forming a via hole and a second wire trench in the second interlayer dielectric film so as to expose the wiring material film; applying a barrier metal film on the semiconductor device; and after the barrier metal film on the wiring material film is removed by using, for example, a re-sputtering process, applying a barrier metal film on the wiring material film. The re-sputtering process can remove an oxide film of impurity metal in the seed film applied on the wiring material film.

    摘要翻译： 半导体器件制造方法包括以下步骤：在形成在第一层间电介质膜中的第一线沟槽中施加包括阻挡金属膜，种子膜和布线材料膜的第一布线; 在第一层间电介质膜上形成第二层间电介质膜之后，在第二层间电介质膜中形成通孔和第二导线沟槽，以露出布线材料膜; 在半导体器件上施加阻挡金属膜; 并且通过使用例如再溅射工艺除去布线材料膜上的阻挡金属膜之后，在布线材料膜上施加阻挡金属膜。 再溅射工艺可以除去施加在布线材料膜上的种子膜中的杂质金属的氧化物膜。

    Semiconductor device and method for manufacturing the same
    6.
    发明申请
    Semiconductor device and method for manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20070085211A1

    公开(公告)日：2007-04-19

    申请号：US11483668

    申请日：2006-07-11

    申请人： Masakazu Hamada

    发明人： Masakazu Hamada

    IPC分类号： H01L23/52

    CPC分类号： H01L23/53238 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76862 ,  H01L21/76865 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A second interlayer insulating film is formed on a first interlayer insulating film and a wiring including a Cu film, and a via and a trench are formed in the second interlayer insulating film so as to expose the Cu film. After a hollow having an inner diameter larger than that of the via is formed in the Cu film, a first barrier metal film is formed. Subsequently, the first barrier metal film is re-sputtered to fill the hollow with the first barrier metal film and to extend the via so as to have a rounded lower part. Next, a second barrier metal film and a Cu film are formed sequentially in the via and the trench. Then, the Cu film, the second barrier metal film, and the first barrier metal film on the second interlayer insulating film are removed.

    摘要翻译： 在第一层间绝缘膜上形成第二层间绝缘膜，并且在第二层间绝缘膜中形成具有Cu膜的布线，并且通孔和沟槽露出Cu膜。 在Cu膜中形成具有大于通孔的内径的中空部分之后，形成第一阻挡金属膜。 随后，第一阻挡金属膜被重新溅射以用第一阻挡金属膜填充中空部并且延伸通孔以具有圆形的下部。 接下来，在通孔和沟槽中依次形成第二阻挡金属膜和Cu膜。 然后，去除第二层间绝缘膜上的Cu膜，第二阻挡金属膜和第一阻挡金属膜。