发明申请
- 专利标题： Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system utilizing overlap of exposure zones with attenuation of the aerial image in the overlap region
- 专利标题（中）： 在无掩模光刻系统中补偿印刷图案的缝合干扰的方法和系统，利用曝光区域与重叠区域中的空间图像的衰减重叠
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申请号： US11593076申请日： 2006-11-06
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公开(公告)号： US20070146672A1公开(公告)日： 2007-06-28
- 发明人: Arno Bleeker , Wenceslao Cebuhar , Justin Kreuzer , Azat Latypov , Yuli Vladimirsky
- 申请人： Arno Bleeker , Wenceslao Cebuhar , Justin Kreuzer , Azat Latypov , Yuli Vladimirsky
- 申请人地址： NL Veldhoven
- 专利权人： ASML Holding N.V.
- 当前专利权人： ASML Holding N.V.
- 当前专利权人地址： NL Veldhoven
- 主分类号： G03B27/54
- IPC分类号： G03B27/54
摘要：
A method and system are provided for printing a pattern on a photosensitive surface using a spatial light modulator (SLM). An exemplary method includes defining two or more exposure areas on the photosensitive surface, the exposure areas overlapping along respective edge portions of the exposure areas to form an overlap zone therebetween. Two or more exposure areas are exposed to print an image therein, the exposing extending through the overlap zone. The exposing within the overlap zone is then attenuated.
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