发明申请
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11635039申请日: 2006-12-07
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公开(公告)号: US20070148843A1公开(公告)日: 2007-06-28
- 发明人: Tomohiro Saito , Akio Kaneko , Atsushi Yagishita
- 申请人: Tomohiro Saito , Akio Kaneko , Atsushi Yagishita
- 优先权: JP2005-363355 20051216
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242 ; H01L21/8234 ; H01L21/336
摘要:
This disclosure concerns a manufacturing method of a semiconductor device includes forming a Fin-type body on an insulation layer, the Fin-type body being made of a semiconductor material and having an upper surface covered with a protective film; forming a gate insulation film on side surfaces of the Fin-type body; depositing a gate electrode material so as to cover the Fin-type body; planarizing the gate electrode material; forming a gate electrode by processing the gate electrode material; depositing an interlayer insulation film so as to cover the gate electrode; exposing the upper surface of the gate electrode; depositing a metal layer on the upper surface of the gate electrode; siliciding the gate electrode by reacting the gate electrode with the metal layer; forming a trench on the upper surface of the protective film by removing an unreacted metal in the metal layer; and filling the trench with a conductor.