发明申请
US20070152233A1 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
有权
基于ZnO的化合物半导体晶体和ZnO基化合物半导体衬底的制造方法
- 专利标题： Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate
- 专利标题（中）： 基于ZnO的化合物半导体晶体和ZnO基化合物半导体衬底的制造方法
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申请号： US11509063申请日： 2006-08-24
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公开(公告)号： US20070152233A1公开(公告)日： 2007-07-05
- 发明人: Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Cho
- 申请人： Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Cho
- 优先权： JP2005-243472 20050824
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L29/24 ; H01L21/00
摘要：
A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
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