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    ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal
    8.
    发明授权
    ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal 失效
    ZnO晶体生长方法，ZnO晶体结构和使用ZnO晶体的半导体器件

    公开(公告)号：US06664565B1

    公开(公告)日：2003-12-16

    申请号：US09648046

    申请日：2000-08-25

    申请人： Michihiro Sano ,  Takafumi Yao

    发明人： Michihiro Sano ,  Takafumi Yao

    IPC分类号： H01L2912

    CPC分类号： C30B23/02 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

    摘要： A ZnO crystal growing method having the steps of: growing a low temperature growth ZnO layer on a sapphire substrate at a temperature lower than a single crystal ZnO growth temperature; thermally processing the low temperature growth ZnO layer at a temperature near to a growth temperature of a high temperature growth single crystal ZnO layer higher than the growth temperature low temperature growth ZnO layer; and growing a high temperature growth single crystal ZnO layer on the low temperature growth ZnO layer at a temperature higher than the growth temperature of the of the low temperature growth ZnO layer. ZnO crystal of good quality with a reduced number of crystal defects can be grown on a sapphire substrate.

    摘要翻译： 一种ZnO晶体生长方法，其具有以下步骤：在低于单晶ZnO生长温度的温度下，在蓝宝石衬底上生长低温生长ZnO层; 在高于生长温度低温生长ZnO层的高温生长单晶ZnO层的生长温度附近的温度下热处理低温生长ZnO层; 以及在高于低温生长ZnO层的生长温度的温度下，在低温生长ZnO层上生长高温生长的单晶ZnO层。 可以在蓝宝石衬底上生长具有减少数量的晶体缺陷的良好质量的ZnO晶体。

    Device manufacturing method
    10.
    发明授权
    Device manufacturing method 有权
    器件制造方法

    公开(公告)号：US07906409B2

    公开(公告)日：2011-03-15

    申请号：US12405696

    申请日：2009-03-17

    申请人： Takafumi Yao ,  Meoung-Whan Cho

    发明人： Takafumi Yao ,  Meoung-Whan Cho

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/20

    摘要： A device manufacturing method includes a buffer layer forming step of forming a buffer layer on an underlying substrate, a mask pattern forming step of forming, on the buffer layer, a mask pattern which partially covers the buffer layer, a growth step of growing a group III nitride crystal from regions exposed by the mask pattern on the surface of the buffer layer, thereby forming a structure in which a plurality of crystal members are arranged with gaps therebetween so as to partially cover the buffer layer and the mask pattern, a channel forming step of forming a channel, to supply a second etchant for the buffer layer to the buffer layer, by selectively etching the mask pattern using a first etchant for the mask pattern, and a separation step of separating the plurality of crystal members from the underlying substrate and separating the plurality of crystal members from each other by supplying the second etchant to the buffer layer through the gaps and the channel and selectively etching the buffer layer.

    摘要翻译： 一种器件制造方法，包括在下层基板上形成缓冲层的缓冲层形成步骤，在缓冲层上形成部分覆盖缓冲层的掩模图案的掩模图形形成步骤， III型氮化物晶体由缓冲层表面上的掩模图案露出的区域形成，从而形成多个晶体构件之间间隙地排列的结构，以部分地覆盖缓冲层和掩模图案，形成沟道 形成通道的步骤，通过使用用于掩模图案的第一蚀刻剂选择性地蚀刻掩模图案，以及将多个晶体构件与下面的衬底分离的分离步骤，将缓冲层的第二蚀刻剂提供给缓冲层 以及通过将所述第二蚀刻剂通过所述间隙和所述通道向所述缓冲层提供第二蚀刻剂，并且选择性地将所述多个晶体构件分离 清洗缓冲层。