公开(公告)号：US07438762B2

公开(公告)日：2008-10-21

申请号：US11509063

申请日：2006-08-24

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

IPC分类号： C30B25/12

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶制成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US06385050B1

公开(公告)日：2002-05-07

申请号：US09147665

申请日：1999-06-14

申请人： Katsuyoshi Orita ,  Masamichi Morioka ,  Hiroshi Yoneyama

发明人： Katsuyoshi Orita ,  Masamichi Morioka ,  Hiroshi Yoneyama

IPC分类号： H05K714

CPC分类号： H05K13/0069 ,  E05B65/468 ,  G11B17/22

摘要： A housing device 100 for plural components that can be arrayed one on top of another includes a support 101 for housing the components on introducing the latter into the support, and a locking unit 102 configured for preventing the components housed in the support 101 from being moved out of the support 101. The housing device 100 also includes a base member 103 having an unlocking support 101 which is adapted to release the state of the locking unit 102 prohibiting the movement of the components housed in the support 101. The components to be housed are usually locked by the locking unit 102. The locked state of the components is established by simply placing the components into the support and is released by the unlocking support 101. A larger number of the components can be housed on top of each other if so desired.

摘要翻译： 用于多个组件的壳体装置100可以一个排列在另一个的上方，包括：用于将部件引入到支撑件中的部件的支撑件101;以及锁定单元102，被配置为防止容纳在支撑件101中的部件被移动 外壳装置100还包括具有解锁支撑件101的基座构件103，该解锁支撑件适于释放锁定单元102的状态，从而阻止容纳在支撑件101中的部件的移动。 通常由锁定单元102锁定。部件的锁定状态通过简单地将部件放置到支撑件中并且被解锁支撑件101释放来建立。如果是这样，则可以将更多数量的部件容纳在彼此的顶部 想要的

公开(公告)号：US20090045398A1

公开(公告)日：2009-02-19

申请号：US12239739

申请日：2008-09-27

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

IPC分类号： H01L21/34 ,  H01L29/22

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US20070152233A1

公开(公告)日：2007-07-05

申请号：US11509063

申请日：2006-08-24

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Cho

IPC分类号： H01L33/00 ,  H01L29/24 ,  H01L21/00

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US20060124051A1

公开(公告)日：2006-06-15

申请号：US11239214

申请日：2005-09-30

申请人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito

发明人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B7/10 ,  C30B7/00 ,  C30B29/16

摘要： An objective of the present invention is to provide a zinc oxide (ZnO) single crystal whose electroconductivity is excellent and which has a high quality. The invention relates to a zinc oxide single crystal whose concentration of metals other than zinc in the crystal fulfills the following equation: [−cM]/[+cM]≧3wherein M is a metal other than zinc, [−cM] is a concentration of M in a −c region in the zinc oxide crystal, and [+cM] is a concentration of M in a +c region in the zinc oxide crystal.

摘要翻译： 本发明的目的是提供一种其导电性优异且质量高的氧化锌（ZnO）单晶。 本发明涉及一种氧化锌单晶，其晶体中锌以外的金属的浓度满足以下等式：<？在线公式描述=“在线公式”end =“lead”？> [ - cM] / [+ cM]> = 3 <？in-line-formula description =“In-line Formulas”end =“tail”？>其中M是除锌以外的金属，[-cM] -c区域，[+ cM]是氧化锌晶体中+ c区域中的M的浓度。

公开(公告)号：US06535828B1

公开(公告)日：2003-03-18

申请号：US09695911

申请日：2000-10-26

申请人： Takashi Furukawa ,  Hiroshi Yoneyama ,  Yukihiko Horii ,  Nobuo Uesugi

发明人： Takashi Furukawa ,  Hiroshi Yoneyama ,  Yukihiko Horii ,  Nobuo Uesugi

IPC分类号： G01F1700

CPC分类号： G01H9/002 ,  G01H1/12 ,  G01H5/00 ,  G01H17/00 ,  G01N29/265 ,  G01N2291/0234 ,  G01N2291/0421 ,  G01N2291/0422 ,  G01N2291/044 ,  G01N2291/102 ,  G01N2291/2632 ,  G01N2291/267

摘要： A method and an apparatus for visualizing an elastic wave propagation in a solid substance can be applied to a subject substance which is any one of a transparent body and an opaque body, and can detect SV waves (transverse waves) and SH waves (transverse waves) in elastic wave motion modes, and longitudinal waves, surface waves, and creeping waves. The visualization method comprises the steps of: generating elastic waves in a solid substance in response to electric signals; measuring a quantity of stress change in the solid substance in connection with elastic waves propagation in the solid substance; synchronizing a transmission timing of the electric signals with a measurement timing of the stress change; carrying out measurement while scanning a sensor; and imaging wave fronts of the elastic waves propagated in the solid substance by synchronously indicating the stress change as a function of time. The visualization apparatus comprises an elastic wave generator (8) for generating elastic waves in a solid substance (9) in response to an electric signals; an electric signal transmitter (7) for transmitting electric signals to the elastic wave generator (8); a sensor (1) for measuring elastic waves propagated in the solid substance; a sensor scanner (3) for controlling a scanning position of said sensor; a detected-signal recorder (2) for receiving and recording detected-signals from the sensor (1); a synchronizing circuit (10) for sending the detected-signals from the sensor (1) to the recorder (1) in synchronization with timing signals from the sensor scanner (3) and electric signal transmitter (7); and an elastic wave stress distribution display (4) for imaging stress distribution signals of the detected-signals from the detected-signal recorder (2).

摘要翻译： 用于使固体物质中的弹性波传播可视化的方法和装置可以应用于透明体和不透明体中的任何一个的被检体，并且可以检测SV波（横波）和SH波（横波 ）在弹性波运动模式，以及纵波，表面波和爬行波。 可视化方法包括以下步骤：响应于电信号产生固体物质中的弹性波; 测量与固体物质中弹性波传播相关的固体物质的应力变化量; 使电信号的发送定时与应力变化的测量定时同步; 扫描传感器时进行测量; 以及通过同时指示应力变化作为时间的函数在固体物质中传播的弹性波的成像波前面。 可视化装置包括：弹性波发生器（8），用于响应于电信号产生固体物质（9）中的弹性波; 用于向弹性波发生器（8）发送电信号的电信号发射器（7）; 传感器（1），用于测量在固体物质中传播的弹性波; 传感器扫描器（3），用于控制所述传感器的扫描位置; 用于从所述传感器（1）接收和记录检测信号的检测信号记录器（2）; 与来自传感器扫描器（3）和电信号发射器（7）的定时信号同步地将检测信号从传感器（1）发送到记录器（1）的同步电路（10） 以及用于对来自检测信号记录器（2）的检测信号的应力分布信号进行成像的弹性波应力分布显示（4）。

公开(公告)号：US07829207B2

公开(公告)日：2010-11-09

申请号：US12239739

申请日：2008-09-27

申请人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

发明人： Hiroyuki Kato ,  Michihiro Sano ,  Katsumi Maeda ,  Hiroshi Yoneyama ,  Takafumi Yao ,  Meoung Whan Cho

IPC分类号： B32B9/00 ,  B32B19/00 ,  C30B29/16 ,  C30B29/46

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10T428/265

摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.

摘要翻译： 一种制造质量好的ZnO类化合物半导体晶体的制造方法。 制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或 减。 ZnO基化合物半导体晶体在主表面上生长。

公开(公告)号：US20080056984A1

公开(公告)日：2008-03-06

申请号：US11576408

申请日：2005-09-21

申请人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito ,  Fumio Orito

发明人： Kenji Yoshioka ,  Hiroshi Yoneyama ,  Katsumi Maeda ,  Ikuo Niikura ,  Mitsuru Sato ,  Masumi Ito ,  Fumio Orito

IPC分类号： C30B29/16 ,  C30B7/10

CPC分类号： C30B29/16 ,  C30B7/10

摘要： Provided is a single crystal with a hexagonal wurtzite structure which is useful as a substrate for various devices and has high purity and is uniform. The single crystal with a hexagonal wurtzite structures which is obtained by a crystal growth on at least an m-plane of a columnar seed crystal and represented by AX (A representing an electropositive element and X representing an electronegative element) is characterized in that a variation in the concentration of a metal other than the electropositive element A and having a concentration of 0.1 to 50 ppm is within 100%.

摘要翻译： 提供具有六方纤锌矿结构的单晶，其可用作各种装置的基板，并且具有高纯度并且均匀。 通过在柱状晶种的至少m面上由AX（表示正电荷的元素和表示电负性元素的X）表示的晶体生长获得的具有六方纤锌矿结构的单晶的特征在​​于， 在正电性元素A以外的金属浓度为0.1〜50ppm的浓度为100％以下。