Invention Application
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11646837Application Date: 2006-12-27
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Publication No.: US20070152245A1Publication Date: 2007-07-05
- Inventor: Kwang Ko
- Applicant: Kwang Ko
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Priority: KR10-2005-0134468 20051229
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
Disclosed is a semiconductor device. The semiconductor device includes; a pair of drift regions formed in a semiconductor substrate; a trench region formed between the pair of drift regions; an oxide layer spacer on both sidewalls of the trench region; a gate formed in the trench region; and a source and a drain formed in the pair of the drift regions, respectively.
Public/Granted literature
- US07541641B2 Gate structure in a trench region of a semiconductor device and method for manufacturing the same Public/Granted day:2009-06-02
Information query
IPC分类:
