- 专利标题： Manufacturing method for semiconductor device and semiconductor device
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申请号： US11717010申请日： 2007-03-13
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公开(公告)号： US20070155155A1公开(公告)日： 2007-07-05
- 发明人: Kazumasa Tanida , Yoshihiko Nemoto , Mitsuo Umemoto
- 申请人： Kazumasa Tanida , Yoshihiko Nemoto , Mitsuo Umemoto
- 优先权： JP2003-345928 20030310
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44
摘要：
A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.
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