公开(公告)号：US07235428B2

公开(公告)日：2007-06-26

申请号：US10704608

申请日：2003-11-12

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05027 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/131 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/05611 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166

摘要： A semiconductor device production method including: the step of forming a stopper mask layer of a first metal on a semiconductor substrate, the stopper mask layer having an opening at a predetermined position thereof; the metal supplying step of supplying a second metal into the opening of the stopper mask layer to form a projection electrode of the second metal; and removing the stopper mask layer after the metal supplying step.

摘要翻译： 一种半导体器件制造方法，包括：在半导体衬底上形成第一金属的阻挡掩模层的步骤，所述阻挡掩模层在其预定位置具有开口; 所述金属供给步骤将第二金属供给到所述阻挡掩模层的开口中，以形成所述第二金属的突起电极; 以及在金属供给步骤之后移除止动掩模层。

公开(公告)号：US20050186771A1

公开(公告)日：2005-08-25

申请号：US10954649

申请日：2004-10-01

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L21/60 ,  H01L21/44 ,  H01L23/48 ,  H01L23/485 ,  H01L29/41

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：形成覆盖形成有电极的半导体衬底的表面的钝化膜，其中形成有开口以从电极中露出预定电极; 在钝化膜中的开口附近形成第一金属的防扩散插塞; 将第二金属材料供给到已经形成有扩散防止塞的半导体基板的表面上，以形成第二金属的籽晶层; 形成覆盖种子层并形成有开口的抗蚀剂膜，以暴露防扩散插塞上的籽晶层的预定区域; 将第三金属材料供应到所述抗蚀剂膜的开口中，以形成所述第三金属的突出电极; 在形成突起电极的步骤之后去除抗蚀剂膜; 以及在形成突起电极的步骤之后去除种子层。

公开(公告)号：US20070155155A1

公开(公告)日：2007-07-05

申请号：US11717010

申请日：2007-03-13

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.

公开(公告)号：US07638421B2

公开(公告)日：2009-12-29

申请号：US11717010

申请日：2007-03-13

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L21/44

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：形成覆盖形成有电极的半导体衬底的表面的钝化膜，其中形成有开口以从电极中露出预定电极; 在钝化膜中的开口附近形成第一金属的防扩散插塞; 将第二金属材料供给到已经形成有扩散防止塞的半导体基板的表面上，以形成第二金属的籽晶层; 形成覆盖种子层并形成有开口的抗蚀剂膜，以暴露防扩散插塞上的籽晶层的预定区域; 将第三金属材料供应到所述抗蚀剂膜的开口中，以形成所述第三金属的突出电极; 在形成突起电极的步骤之后去除抗蚀剂膜; 以及在形成突起电极的步骤之后去除种子层。

公开(公告)号：US07416963B2

公开(公告)日：2008-08-26

申请号：US11182055

申请日：2005-07-15

申请人： Mitsuo Umemoto ,  Yoshio Okayama ,  Kazumasa Tanida ,  Hiroshi Terao ,  Yoshihiko Nemoto

发明人： Mitsuo Umemoto ,  Yoshio Okayama ,  Kazumasa Tanida ,  Hiroshi Terao ,  Yoshihiko Nemoto

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L29/40 ,  H01L23/52 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/05548

摘要： This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.

摘要翻译： 本发明提供了通过简化制造工艺并提高半导体器件的产量来降低具有通孔电极的半导体器件的制造成本的制造方法。 第一绝缘膜形成在半导体衬底的顶表面上。 蚀刻第一绝缘膜的一部分以形成半导体衬底的一部分露出的开口。 然后在开口和第一绝缘膜上形成焊盘电极。 第二绝缘膜形成在半导体衬底的背面上。 然后形成具有比开口大的孔的通孔。 并且在通孔和第二绝缘膜上形成第三绝缘膜。 对通孔的底部的第三绝缘膜进行蚀刻以露出焊盘电极。 之后，在通孔中形成通孔电极和布线层。 最后，将半导体衬底切割并分离成多个半导体管芯。

公开(公告)号：US07282444B2

公开(公告)日：2007-10-16

申请号：US11003769

申请日：2004-12-06

申请人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yoshihiko Nemoto ,  Kenji Takahashi

发明人： Kazumasa Tanida ,  Mitsuo Umemoto ,  Yoshihiko Nemoto ,  Kenji Takahashi

IPC分类号： H01L21/44

CPC分类号： H01L23/481 ,  H01L21/76843 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/73257 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00012

摘要： The invention provides a semiconductor chip manufacturing method including the steps of: forming a concave portion extended in the thickness direction of a semiconductor substrate which has a front surface and a rear surface and has a function device formed on the front surface, from the front surface; forming an oxidation preventive film made of an inert first metal material by supplying the first metal material onto the inner wall surface of the concave portion; supplying a second metal material containing a metal which is oxidized more easily than the first metal material to the inside of the concave portion after the step of forming the oxidation preventive film; electrically connecting the second metal material supplied to the inside of the concave portion and the function device; and thinning the semiconductor substrate so that the thickness thereof becomes thinner than the depth of the concave portion by removing the semiconductor substrate from the rear surface while leaving the oxidation preventive film.

摘要翻译： 本发明提供一种半导体芯片制造方法，包括以下步骤：在具有前表面和后表面的半导体基板的厚度方向上形成有从前表面形成的功能元件的凹部 ; 通过将所述第一金属材料供应到所述凹部的内壁表面上，形成由惰性第一金属材料制成的防氧化膜; 在形成氧化防止膜的步骤之后，将含有比第一金属材料更容易氧化的金属的第二金属材料供给到凹部内部; 电连接供应到凹部内侧的第二金属材料和功能装置; 并且通过在离开氧化防止膜的同时从后表面去除半导体衬底，使半导体衬底的厚度变薄到比凹部的深度更薄。

公开(公告)号：US20060033168A1

公开(公告)日：2006-02-16

申请号：US11182055

申请日：2005-07-15

申请人： Mitsuo Umemoto ,  Yoshio Okayama ,  Kazumasa Tanida ,  Hiroshi Terao ,  Yoshihiko Nemoto

发明人： Mitsuo Umemoto ,  Yoshio Okayama ,  Kazumasa Tanida ,  Hiroshi Terao ,  Yoshihiko Nemoto

IPC分类号： H01L29/76

CPC分类号： H01L21/76898 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/05548

摘要： This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.

摘要翻译： 本发明提供了通过简化制造工艺并提高半导体器件的产量来降低具有通孔电极的半导体器件的制造成本的制造方法。 第一绝缘膜形成在半导体衬底的顶表面上。 蚀刻第一绝缘膜的一部分以形成半导体衬底的一部分露出的开口。 然后在开口和第一绝缘膜上形成焊盘电极。 第二绝缘膜形成在半导体衬底的背面上。 然后形成具有比开口大的孔的通孔。 并且在通孔和第二绝缘膜上形成第三绝缘膜。 对通孔的底部的第三绝缘膜进行蚀刻以露出焊盘电极。 之后，在通孔中形成通孔电极和布线层。 最后，将半导体衬底切割并分离成多个半导体管芯。

公开(公告)号：US08089163B2

公开(公告)日：2012-01-03

申请号：US11396797

申请日：2006-04-04

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05027 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/131 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/05611 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166

摘要： A semiconductor device production method including: the step of forming a stopper mask layer of a first metal on a semiconductor substrate, the stopper mask layer having an opening at a predetermined position thereof; the metal supplying step of supplying a second metal into the opening of the stopper mask layer to form a projection electrode of the second metal; and removing the stopper mask layer after the metal supplying step.

摘要翻译： 一种半导体器件制造方法，包括：在半导体衬底上形成第一金属的阻挡掩模层的步骤，所述阻挡掩模层在其预定位置具有开口; 所述金属供给步骤将第二金属供给到所述阻挡掩模层的开口中，以形成所述第二金属的突起电极; 以及在金属供给步骤之后移除止动掩模层。

公开(公告)号：US07227262B2

公开(公告)日：2007-06-05

申请号：US10954649

申请日：2004-10-01

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L23/52 ,  H01L23/48

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：形成覆盖形成有电极的半导体衬底的表面的钝化膜，其中形成有开口以从电极中露出预定电极; 在钝化膜中的开口附近形成第一金属的防扩散插塞; 将第二金属材料供给到已经形成有扩散防止塞的半导体基板的表面上，以形成第二金属的籽晶层; 形成覆盖种子层并形成有开口的抗蚀剂膜，以暴露防扩散插塞上的籽晶层的预定区域; 将第三金属材料供应到所述抗蚀剂膜的开口中，以形成所述第三金属的突出电极; 在形成突起电极的步骤之后去除抗蚀剂膜; 以及在形成突起电极的步骤之后去除种子层。

公开(公告)号：US20060194367A1

公开(公告)日：2006-08-31

申请号：US11396797

申请日：2006-04-04

申请人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

发明人： Kazumasa Tanida ,  Yoshihiko Nemoto ,  Mitsuo Umemoto

IPC分类号： H01L21/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05027 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/131 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/05611 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166

摘要： A semiconductor device production method including: the step of forming a stopper mask layer of a first metal on a semiconductor substrate, the stopper mask layer having an opening at a predetermined position thereof; the metal supplying step of supplying a second metal into the opening of the stopper mask layer to form a projection electrode of the second metal; and removing the stopper mask layer after the metal supplying step.

摘要翻译： 一种半导体器件制造方法，包括：在半导体衬底上形成第一金属的阻挡掩模层的步骤，所述阻挡掩模层在其预定位置具有开口; 所述金属供给步骤将第二金属供给到所述阻挡掩模层的开口中，以形成所述第二金属的突起电极; 以及在金属供给步骤之后移除止动掩模层。