发明申请
- 专利标题: Focused ion beam processing method
- 专利标题(中): 聚焦离子束加工方法
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申请号: US11542434申请日: 2006-10-03
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公开(公告)号: US20070158590A1公开(公告)日: 2007-07-12
- 发明人: Ryoji Hagiwara , Yasuhiko Sugiyama , Tomokazu Kozakai
- 申请人: Ryoji Hagiwara , Yasuhiko Sugiyama , Tomokazu Kozakai
- 优先权: JP2005-289717 20051003
- 主分类号: H01J37/08
- IPC分类号: H01J37/08
摘要:
There is provided a focused ion beam processing method in which damage to a workpiece is minimized when the surface of the workpiece is irradiated and processed with an ion beam. The method comprises the steps of: generating an acceleration voltage between an ion source and a workpiece; focusing an ion beam emitted from the ion source; and applying the ion beam to a predetermined process position to process the surface of the workpiece. In this process, the energy level of the ion beam produced by the acceleration voltage is set within a range from at least 1 keV to less than 20 keV.
公开/授权文献
- US07576340B2 Focused ion beam processing method 公开/授权日:2009-08-18
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