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    Focused Ion Beam Apparatus
    1.
    发明申请
    Focused Ion Beam Apparatus 审中-公开
    聚焦离子束装置

    公开(公告)号：US20080156998A1

    公开(公告)日：2008-07-03

    申请号：US11961967

    申请日：2007-12-20

    申请人： Yasuhiko Sugiyama

    发明人： Yasuhiko Sugiyama

    IPC分类号： H01J3/14

    CPC分类号： H01J37/08 ,  H01J37/3007 ,  H01J37/3056 ,  H01J2237/0817 ,  H01J2237/31742 ,  H01J2237/31749

    摘要： A focused ion beam apparatus including a plasma type gas ion source for generating an ion beam, and an ion optical system for gathering the ion beam generated from the plasma type gas ion source onto a sample. The ion optical system is constructed by a constitution having 2 pieces of basic electrostatic lenses and an ion optical system magnification of the 2 pieces of basic electrostatic lenses is set to be equal to or smaller than 1/300.

    摘要翻译： 包括用于产生离子束的等离子体型气体离子源的聚焦离子束装置和用于将从等离子体型气体离子源产生的离子束聚集到样品上的离子光学系统。 离子光学系统由具有2个基本静电透镜的构造构成，并且2个基本静电透镜的离子光学系统放大率设定为等于或小于1/300。

    Photomask correction method using composite charged particle beam, and device used in the correction method
    2.
    发明申请
    Photomask correction method using composite charged particle beam, and device used in the correction method 审中-公开

    公开(公告)号：US20070267579A1

    公开(公告)日：2007-11-22

    申请号：US11646723

    申请日：2006-12-28

    申请人： Yasuhiko Sugiyama ,  Junichi Tashiro ,  Anto Yasaka

    发明人： Yasuhiko Sugiyama ,  Junichi Tashiro ,  Anto Yasaka

    IPC分类号： H01J3/14

    CPC分类号： G03F1/74

    摘要： The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method. The device of the present invention has an electron beam lens barrel that can carry out processing, as well as an FIB lens barrel, provided inside the same sample chamber, which means that a mask repair method of the present invention, in correction processing to remove redundant sections such as a mask opaque defect, phase shift film bump defect or a glass substrate cut remnant defect, comprises a step of coarse correction by etching using a focused ion beam and a step of finishing processing using an electron beam, to remove surface damage due to gallium irradiation, and residual gallium.

    Apparatus for processing and observing a sample
    4.
    发明授权
    Apparatus for processing and observing a sample 失效
    用于处理和观察样品的装置

    公开(公告)号：US06870161B2

    公开(公告)日：2005-03-22

    申请号：US10644696

    申请日：2003-08-20

    申请人： Tatsuya Adachi ,  Toshiaki Fujii ,  Hiroshi Sawaragi ,  Yasuhiko Sugiyama

    发明人： Tatsuya Adachi ,  Toshiaki Fujii ,  Hiroshi Sawaragi ,  Yasuhiko Sugiyama

    IPC分类号： G01N1/28 ,  H01J37/20 ,  H01J37/305 ,  G01N1/04 ,  H01J37/26

    CPC分类号： G01N1/286 ,  G01N2001/2873 ,  H01J37/20 ,  H01J37/3056 ,  H01J2237/2817 ,  H01J2237/31745

    摘要： An apparatus for processing and observing a sample has a sample stage for supporting a sample at a preselected location thereof, a focused ion beam irradiation system for irradiating the sample with a focused ion beam along an optical axis to cut out a portion from the sample, and a side entry stage disposed over the sample stage and extending slantingly with respect to the optical axis of the focused ion beam irradiated by the focused ion beam irradiation system. The side entry stage has a microscope sample holder for picking up the cut-out sample portion directly from the preselected location of the sample and for supporting the sample portion. The microscope sample holder is configured to be removed from the side entry stage while supporting the sample portion and to be connected to an entry stage of a microscope device for observing the sample portion.

    摘要翻译： 用于处理和观察样品的装置具有用于在预选位置处支撑样品的样品台，用于沿着光轴照射具有聚焦离子束的样品的聚焦离子束照射系统，以从样品中切出一部分， 以及设置在样品台上并相对于由聚焦离子束照射系统照射的聚焦离子束的光轴倾斜延伸的侧入口台。 侧进入台具有用于从样品的预选位置直接拾取切出的样品部分并用于支撑样品部分的显微镜样品架。 显微镜样品架被配置为在支撑样品部分的同时从侧入口台移除并连接到用于观察样品部分的显微镜装置的入口台。

    Liquid metal ion source and method for measuring flow impedance of liquid metal ion source
    5.
    发明授权
    Liquid metal ion source and method for measuring flow impedance of liquid metal ion source 有权
    液态金属离子源和液体金属离子源流量阻抗测量方法

    公开(公告)号：US06472881B1

    公开(公告)日：2002-10-29

    申请号：US09673941

    申请日：2000-11-21

    申请人： Yasuhiko Sugiyama ,  Masamichi Oi

    发明人： Yasuhiko Sugiyama ,  Masamichi Oi

    IPC分类号： G01L2134

    CPC分类号： H01J27/22 ,  H01J2237/0805

    摘要： A liquid metal ion source has an emitter electrode for emitting ions, an extraction electrode, proximate the emitter electrode for generating a focused electric field at a tip of the emitter electrode, and a suppression electrode proximate the extraction electrode for adjusting the strength of the focused electric field generated at the tip of the emitter electrode so that metal ions are extracted from liquid metal covering the tip of the emitter electrode at a desired emission current value. A storage device stores a function defining a relationship between variation (&Dgr;Ie) in current of the emitter electrode and variation (&Dgr;Vsup) in voltage of the suppression electrode as a function &Dgr;Ie=F(&Dgr;Vsup), with the voltage (Vext) of the extraction electrode being at a fixed value. A control apparatus controls voltages of the extraction and suppression electrodes and the emission current, detects the variation &Dgr;Vsup in the voltage (Vsup) of the suppression electrode when a voltage (Vext) of the extraction electrode is made to vary by only &Dgr;Vext with the current of the emitter electrode being held to a fixed value, and calculates flow impedance &Dgr;Vext/&Dgr;Ie using the voltage variation amounts &Dgr;Vext and &Dgr;Vsup and the function acquired form the storage device.

    摘要翻译： 液体金属离子源具有用于发射离子的发射电极，靠近发射极的引出电极，用于在发射极的尖端产生聚焦电场，以及靠近引出电极的抑制电极，用于调节聚焦的强度 在发射极电极的尖端处产生电场，使得金属离子以覆盖发射极的尖端的液态金属以期望的发射电流值提取。 存储装置存储定义发射极电流的变化（DELTAIe）与抑制电极的电压的变化（DELTAVsup）之间的关系作为函数DELTAIe = F（DELTAVsup）的函数，提取的电压（Vext） 电极处于固定值。 控制装置控制提取和抑制电极的电压和发射电流，当引出电极的电压（Vext）仅与DELTAVext变化时，检测抑制电极的电压（Vsup）的变化量DELTAVsup 并且使用电压变化量DELTAVext和DELTAVsup以及从存储装置获取的功能来计算流量阻抗DELTAVext / DELTAIe。

    Sample transfer apparatus and sample stage
    6.
    发明授权
    Sample transfer apparatus and sample stage 失效
    样品转运装置和样品台

    公开(公告)号：US06384418B1

    公开(公告)日：2002-05-07

    申请号：US09314060

    申请日：1999-05-18

    申请人： Toshiaki Fujii ,  Yasuhiko Sugiyama

    发明人： Toshiaki Fujii ,  Yasuhiko Sugiyama

    IPC分类号： B21D2504

    CPC分类号： H01L21/6831

    摘要： A sample transfer apparatus has a transfer arm for supporting a sample and is mounted for undergoing movement to transfer the sample from a first station to a second station. The transfer arm has a holding portion for holding the sample by hydrogen bonding.

    摘要翻译： 样品传送装置具有用于支撑样品的传送臂，并且安装成用于进行移动以将样品从第一站传送到第二站。 转移臂具有通过氢键保持样品的保持部。

    Observing/forming method with focused ion beam and apparatus therefor
    7.
    发明授权
    Observing/forming method with focused ion beam and apparatus therefor 有权
    聚焦离子束的观察/形成方法及其设备

    公开(公告)号：US06281496B1

    公开(公告)日：2001-08-28

    申请号：US09360775

    申请日：1999-07-26

    申请人： Kazuo Aita ,  Yasuhiko Sugiyama

    发明人： Kazuo Aita ,  Yasuhiko Sugiyama

    IPC分类号： H01J37317

    CPC分类号： H01J37/3005 ,  H01J2237/31744

    摘要： A method for obtaining an image of a sample surface using a charged particle beam apparatus without damaging the sample surface is performed by scanning a focused ion beam onto an observation region of the sample surface, detecting secondary charged particles emanating from the sample surface, and producing an image in response thereto. The sample is placed in a water vapor atmosphere while being scanned by the focused ion beam so that a water vapor absorption layer is formed in the observation region of the sample surface. A SIM image is obtained by placing the periphery of the portion to be processed into a water vapor atmosphere and then irradiating and scanning across the sample surface with the focused ion beam in order to prevent damage to the sample surface. In one embodiment, a focused ion beam instrument is used to observe and repair a photomask without damaging the underlying substrate or to the photomask pattern during observation.

    摘要翻译： 通过将聚焦离子束扫描到样品表面的观察区域，检测从样品表面发出的二次带电粒子，并且产生样品表面的样品表面的图像，而不会损伤样品表面， 响应于此的图像。 在被聚焦离子束扫描的同时将样品置于水蒸汽气氛中，使得在样品表面的观察区域中形成水蒸气吸收层。 通过将待处理部分的周边放置在水蒸汽气氛中，然后用聚焦离子束照射和扫描样品表面，以防止对样品表面的损伤来获得SIM图像。 在一个实施例中，聚焦离子束仪器用于观察和修复光掩模，而不会在观察期间损坏下面的基底或光掩模图案。