发明申请
US20070158681A1 Power integrated circuit device having embedded high-side power switch
有权
电源集成电路器件具有嵌入式高端电源开关
- 专利标题： Power integrated circuit device having embedded high-side power switch
- 专利标题（中）： 电源集成电路器件具有嵌入式高端电源开关
-
申请号： US11329268申请日： 2006-01-09
-
公开(公告)号： US20070158681A1公开(公告)日： 2007-07-12
- 发明人: Sung-lyong Kim , Chang-ki Jeon , Jong-jib Kim , Jong-tae Hwang
- 申请人： Sung-lyong Kim , Chang-ki Jeon , Jong-jib Kim , Jong-tae Hwang
- 主分类号： H01L29/74
- IPC分类号： H01L29/74
摘要：
In one embodiment, a power integrated circuit device is provided. The power integrated circuit device includes a high-side power switch having a high voltage transistor and a low voltage transistor. The high voltage transistor has a gate, a source, and a drain, and is capable of withstanding a high voltage applied to its drain. The low voltage transistor has a gate, a source, and a drain, wherein the drain of the low voltage transistor is connected to the source of the high voltage transistor and the source of the low voltage transistor is connected to the gate of the high voltage transistor, and wherein a control signal is applied to the gate of the low voltage transistor from the power integrated circuit device. The high-side power switch is turned on when a predetermined voltage is applied to the source of the low voltage transistor, a voltage higher than the predetermined voltage is applied to the drain of the high voltage transistor, and a voltage level of the control signal becomes higher than the predetermined voltage by a threshold voltage of the low voltage transistor.