发明申请
- 专利标题： Magnetoresistive effect element and manufacturing method thereof, and magnetic head, magnetic reproducing apparatus, and magnetic memory using the same
- 专利标题（中）： 磁阻效应元件及其制造方法以及使用该磁阻效应元件的磁头，磁再现装置和磁存储器
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申请号： US11644904申请日： 2006-12-26
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公开(公告)号： US20070159733A1公开(公告)日： 2007-07-12
- 发明人: Susumu Hashimoto , Hiromi Fuke , Hitoshi Iwasaki , Masaaki Doi , Kousaku Miyake , Masashi Sahashi
- 申请人： Susumu Hashimoto , Hiromi Fuke , Hitoshi Iwasaki , Masaaki Doi , Kousaku Miyake , Masashi Sahashi
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba,TDK Corporation
- 当前专利权人： Kabushiki Kaisha Toshiba,TDK Corporation
- 当前专利权人地址： JP Tokyo JP Tokyo
- 优先权： JPP2006-003666 20060111
- 主分类号： G11B5/127
- IPC分类号： G11B5/127 ; G11B5/33
摘要：
A magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.
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