公开(公告)号：US20080013218A1

公开(公告)日：2008-01-17

申请号：US11822700

申请日：2007-07-09

申请人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masaaki Doi ,  Kousaku Miyake

发明人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masaaki Doi ,  Kousaku Miyake

IPC分类号： G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B2005/3996 ,  H01L43/08

摘要： A magnetoresistive effect element, includes: a magnetoresistive effect film including: a magnetization fixed layer having a first ferromagnetic film of which magnetization direction is practically fixed in one direction; a magnetization free layer having a second ferromagnetic film of which magnetization direction changes with corresponding to an external magnetic field; and a spacer layer disposed between the magnetization fixed layer and magnetization free layer, and having an insulating layer and a ferromagnetic metal portion penetrating through the insulating layer; a pair of electrodes applying a sense current in a perpendicular direction relative to a film surface of the magnetoresistive effect film; and a layer containing a non-ferromagnetic element disposed at least one of an inside of the magnetization fixed layer-and an inside of the magnetization free layer.

摘要翻译： 一种磁阻效应元件，包括：磁阻效应膜，包括：具有第一铁磁性膜的磁化固定层，其磁化方向实际上在一个方向上固定; 磁化自由层，具有磁化方向相应于外部磁场而变化的第二铁磁性膜; 以及设置在所述磁化固定层和磁化自由层之间并具有贯穿所述绝缘层的绝缘层和强磁性金属部分的间隔层; 一对电极相对于磁阻效应膜的膜表面在垂直方向施加感测电流; 以及包含设置在磁化固定层的内部和磁化自由层的内部中的至少一个的非铁磁性元件的层。

公开(公告)号：US20070159733A1

公开(公告)日：2007-07-12

申请号：US11644904

申请日：2006-12-26

申请人： Susumu Hashimoto ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masaaki Doi ,  Kousaku Miyake ,  Masashi Sahashi

发明人： Susumu Hashimoto ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masaaki Doi ,  Kousaku Miyake ,  Masashi Sahashi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B5/398 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.

摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括磁化固定层，磁化自由层和插入其间的中间层，并且具有磁性区域和电阻高于磁性区域的非磁性区域。 感测电流在大致垂直于其膜平面的方向上传递到磁阻效应膜。 中间层的磁性区域局部地穿透非磁性区域，并且在基本上垂直于膜平面的方向上延伸。 非磁性区域包含具有比包含在磁性区域中的磁性金属元素更大的表面能的非磁性金属元素。

公开(公告)号：US07719800B2

公开(公告)日：2010-05-18

申请号：US11644904

申请日：2006-12-26

申请人： Susumu Hashimoto ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masaaki Doi ,  Kousaku Miyake ,  Masashi Sahashi

发明人： Susumu Hashimoto ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masaaki Doi ,  Kousaku Miyake ,  Masashi Sahashi

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B5/398 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12

摘要： An example magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.

摘要翻译： 示例性磁阻效应元件包括磁阻效应膜，其包括磁化固定层，磁化自由层和插入其间的中间层，并且具有磁性区域和电阻高于磁性区域的非磁性区域。 感测电流在大致垂直于其膜平面的方向上传递到磁阻效应膜。 中间层的磁性区域局部地穿透非磁性区域，并且在基本上垂直于膜平面的方向上延伸。 非磁性区域包含具有比包含在磁性区域中的磁性金属元素更大的表面能的非磁性金属元素。

公开(公告)号：US20050030676A1

公开(公告)日：2005-02-10

申请号：US10937652

申请日：2004-09-10

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  G01R33/09 ,  G11B5/66 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

公开(公告)号：US06395388B1

公开(公告)日：2002-05-28

申请号：US09442032

申请日：1999-11-17

申请人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiromi Fuke

发明人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiromi Fuke

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  E05B17/2007 ,  E05B67/36 ,  E05C1/04 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/325 ,  H01F10/3268 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10 ,  Y10S428/90 ,  Y10T70/498 ,  Y10T70/5319 ,  Y10T292/1025 ,  Y10T428/11 ,  Y10T428/1107 ,  Y10T428/26 ,  Y10T428/265

摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

摘要翻译： 本发明提供一种交换耦合膜，其具有由由Fe，Co和Ni的至少一种材料制成的铁磁膜和反铁磁膜构成的层叠膜结构，其中由铁磁材料制成的交换耦合膜， 在铁磁膜和反铁磁膜之间的界面处设置元件，以改善晶格匹配，这导致交换耦合力的增强，以及包括如上所述的这种交换耦合膜的磁电阻效应元件 以及用于向构成交换耦合膜的铁磁膜提供电流的电极。

公开(公告)号：US5756191A

公开(公告)日：1998-05-26

申请号：US785318

申请日：1997-01-21

申请人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Tomomi Funayama ,  Masashi Sahashi

发明人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Tomomi Funayama ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/10 ,  B32B9/00

CPC分类号： B82Y25/00 ,  G11B5/3903 ,  H01F10/3218 ,  H01F10/3268 ,  H01L43/10 ,  Y10T428/24917

摘要： An exchange coupling film comprising a first antiferromagnetic film, a ferromagnetic film formed as superposed on the first antiferromagnetic film, and a second antiferromagnetic film formed in the interface between the first antiferromagnetic film and the ferromagnetic film, characterized in that the first antiferromagnetic film has a crystal structure selected from the group consisting of tetragonal, body-centered cubic, and NaCl type and the second antiferromagnetic film of .gamma. phase M-Mn alloys with the crystal structure of face-centered cubic, wherein M stands for at least one element selected from the group consisting of Fe, Co, and Ni.

摘要翻译： 一种交换耦合膜，包括第一反铁磁膜，形成为叠置在第一反铁磁膜上的铁磁膜和形成在第一反铁磁膜和铁磁膜之间的界面中的第二反铁磁膜，其特征在于，第一反铁磁膜具有 晶体结构选自正方晶，体心立方和NaCl型，γ相M-Mn合金的第二反铁磁膜具有面心立方晶体结构，其中M代表至少一种选自 由Fe，Co和Ni组成的组。

公开(公告)号：US06338899B1

公开(公告)日：2002-01-15

申请号：US09332440

申请日：1999-06-14

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B566

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

公开(公告)号：US20050167770A1

公开(公告)日：2005-08-04

申请号：US11079322

申请日：2005-03-15

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  G01R33/09 ,  G11B5/66 ,  H01L43/00

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

公开(公告)号：US06455178B1

公开(公告)日：2002-09-24

申请号：US09471498

申请日：1999-12-23

申请人： Hiromi Fuke ,  Yuuzo Kamiguchi ,  Susumu Hashimoto ,  Tomomi Funayama ,  Kazuhiro Saito ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hiromi Fuke ,  Yuuzo Kamiguchi ,  Susumu Hashimoto ,  Tomomi Funayama ,  Kazuhiro Saito ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： B32B1504

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/399 ,  H01F10/3218 ,  H01F10/3268 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/12861 ,  Y10T428/263

摘要： An exchange coupling film comprises a ferromagnetic film and an antiferromagnetic film laminated on the ferromagnetic film, wherein at least a portion of the antiferromagnetic film has a face-centered cubic crystal structure and the antiferromagnetic film comprises an IrMn alloy represented by the general formula of IrxMn100−x, wherein x stands for a value by atomic % satisfying the expression, 2≦x≦80.

摘要翻译： 交换耦合膜包括层叠在铁磁膜上的铁磁膜和反铁磁膜，其中至少一部分反铁磁膜具有面心立方晶体结构，反铁磁膜包括由通式IrxMn100表示​​的IrMn合金 -x，其中x代表满足表达式2 <= x <= 80的原子％的值。

公开(公告)号：US07248448B2

公开(公告)日：2007-07-24

申请号：US10937652

申请日：2004-09-10

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B5/39

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁性层附近设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。