发明申请
US20070159869A1 MULTI-STATE RESISTIVE MEMORY ELEMENT, MULTI-BIT RESISTIVE MEMORY CELL, OPERATING METHOD THEREOF, AND DATA PROCESSING SYSTEM USING THE MEMORY ELEMENT
有权
多状态电阻记忆元件，多位电阻记忆体，其操作方法和使用存储单元的数据处理系统
- 专利标题： MULTI-STATE RESISTIVE MEMORY ELEMENT, MULTI-BIT RESISTIVE MEMORY CELL, OPERATING METHOD THEREOF, AND DATA PROCESSING SYSTEM USING THE MEMORY ELEMENT
- 专利标题（中）： 多状态电阻记忆元件，多位电阻记忆体，其操作方法和使用存储单元的数据处理系统
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申请号： US11619522申请日： 2007-01-03
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公开(公告)号： US20070159869A1公开(公告)日： 2007-07-12
- 发明人: In-Gyu Baek , Dong-Chul Kim , Jang-Eun Lee , Myoung-Jae Lee , Sun-Ae Seo , Hyeong-Jun Kim , Seung-Eon Ahn , Eun-Kyung Yim
- 申请人： In-Gyu Baek , Dong-Chul Kim , Jang-Eun Lee , Myoung-Jae Lee , Sun-Ae Seo , Hyeong-Jun Kim , Seung-Eon Ahn , Eun-Kyung Yim
- 申请人地址： KR Gyeonggi-do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR2006-0002300 20060109
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A multi-bit memory cell stores information corresponding to a high resistive state and multiple other resistive states lower than the high resistive state. A resistance of a memory element within the multi-bit memory cell switches from the high resistive state to one of the other multiple resistive states by applying a corresponding current to the memory element.