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发明申请
US20070163635A1 Semiconductor, n-type semiconductor, p-type semiconductor, semiconductor junction device, pn junction device and photoelectric converter 有权
半导体，n型半导体，p型半导体，半导体结器件，pn结器件和光电转换器

Semiconductor, n-type semiconductor, p-type semiconductor, semiconductor junction device, pn junction device and photoelectric converter
摘要：
The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group IIIb element into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.
摘要（中）：

本发明的半导体具有硫化铁和包含在硫化铁中的禁带控制元件。 禁带控制元件具有能够基于硫化铁中的禁带控制元件的数量密度来控制硫化铁的禁带的性质。 通过将IIIb族元素并入硫化铁中制造n型半导体。 此外，通过将Ia族元素并入硫化铁中来制造p型半导体。 通过使用n型半导体和p型半导体制造半导体接合器件或光电转换器。

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