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31 条记录 (耗时 0.026 秒)

    Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same
    1.
    发明授权
    Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same 有权
    掺杂有Mg或Zn的铁硫化物半导体，结器件和包含它们的光电转换器

    公开(公告)号：US08093684B2

    公开(公告)日：2012-01-10

    申请号：US11651086

    申请日：2007-01-09

    申请人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Kazuhito Nishimura

    发明人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Kazuhito Nishimura

    IPC分类号： H01L29/24 ,  H01L29/36 ,  H01L31/032 ,  H01L31/036

    CPC分类号： H01L31/068 ,  H01L31/0321 ,  Y02E10/547

    摘要： The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group 13 element of the IUPAC system into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.

    摘要翻译： 本发明的半导体具有硫化铁和包含在硫化铁中的禁带控制元件。 禁带控制元件具有能够基于硫化铁中的禁带控制元件的数量密度来控制硫化铁的禁带的性质。 通过将IUPAC系统的第13族元素并入硫化铁中制造n型半导体。 此外，通过将Ia族元素并入硫化铁中来制造p型半导体。 通过使用n型半导体和p型半导体制造半导体接合器件或光电转换器。

    Semiconductor, n-type semiconductor, p-type semiconductor, semiconductor junction device, pn junction device and photoelectric converter
    3.
    发明申请
    Semiconductor, n-type semiconductor, p-type semiconductor, semiconductor junction device, pn junction device and photoelectric converter 有权
    半导体，n型半导体，p型半导体，半导体结器件，pn结器件和光电转换器

    公开(公告)号：US20070163635A1

    公开(公告)日：2007-07-19

    申请号：US11651086

    申请日：2007-01-09

    申请人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Kazuhito Nishimura

    发明人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Kazuhito Nishimura

    IPC分类号： H01L31/00 ,  H01B1/10

    CPC分类号： H01L31/068 ,  H01L31/0321 ,  Y02E10/547

    摘要： The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group IIIb element into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.

    摘要翻译： 本发明的半导体具有硫化铁和包含在硫化铁中的禁带控制元件。 禁带控制元件具有能够基于硫化铁中的禁带控制元件的数量密度来控制硫化铁的禁带的性质。 通过将IIIb族元素并入硫化铁中制造n型半导体。 此外，通过将Ia族元素并入硫化铁中来制造p型半导体。 通过使用n型半导体和p型半导体制造半导体接合器件或光电转换器。

    Stacked photoelectric conversion device and method for producing the same
    5.
    发明授权
    Stacked photoelectric conversion device and method for producing the same 有权
    叠层光电转换装置及其制造方法

    公开(公告)号：US08258596B2

    公开(公告)日：2012-09-04

    申请号：US12523633

    申请日：2007-11-15

    申请人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Takanori Nakano

    发明人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Takanori Nakano

    IPC分类号： H01L31/103 ,  H01L21/329

    CPC分类号： H01L31/0236 ,  H01L31/022425 ,  H01L31/02366 ,  H01L31/076 ,  Y02E10/548

    摘要： To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency.The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.

    摘要翻译： 为了提供层叠光电转换装置及其制造方法，其中在光电转换层之间设置中间层以获得控制入射光的效果，以及在中间层和半导体层之间的界面处的载流子复合 降低增强光电转换效率。 本发明的层叠型光电转换元件具有层叠有pin结构的多个硅系光电转换层，其中至少一对相邻的光电转换层之间具有氮化硅中间层，该一对光电转换 层彼此电连接，并且构成光电转换层的一部分并与中间层接触的p型硅基半导体层包含氮原子。

    STACKED PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING THE SAME
    6.
    发明申请
    STACKED PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING THE SAME 有权
    堆叠式光电转换装置及其制造方法

    公开(公告)号：US20100059847A1

    公开(公告)日：2010-03-11

    申请号：US12523633

    申请日：2007-11-15

    申请人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Takanori Nakano

    发明人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Takanori Nakano

    IPC分类号： H01L31/103 ,  H01L21/329

    CPC分类号： H01L31/0236 ,  H01L31/022425 ,  H01L31/02366 ,  H01L31/076 ,  Y02E10/548

    摘要： To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency.The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.

    摘要翻译： 为了提供层叠光电转换装置及其制造方法，其中在光电转换层之间设置中间层以获得控制入射光的效果，以及在中间层和半导体层之间的界面处的载流子复合 降低增强光电转换效率。 本发明的层叠型光电转换元件具有层叠有pin结构的多个硅系光电转换层，其中至少一对相邻的光电转换层之间具有氮化硅中间层，该一对光电转换 层彼此电连接，并且构成光电转换层的一部分并与中间层接触的p型硅基半导体层包含氮原子。

    PHOTOELECTRIC CONVERSION DEVICE
    9.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE 审中-公开
    光电转换器件

    公开(公告)号：US20130081685A1

    公开(公告)日：2013-04-04

    申请号：US13700237

    申请日：2011-02-17

    申请人： Kazuhito Nishimura ,  Yoshiyuki Nasuno ,  Takanori Nakano

    发明人： Kazuhito Nishimura ,  Yoshiyuki Nasuno ,  Takanori Nakano

    IPC分类号： H01L31/076

    CPC分类号： H01L31/076 ,  H01L21/02532 ,  H01L21/02576 ,  H01L31/03529 ,  H01L31/03767 ,  H01L31/03921 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photoelectric conversion device including a substrate and a pin type photoelectric conversion layer disposed on the surface of the substrate is provided. The pin type photoelectric conversion layer includes a first pin type photoelectric conversion layer formed by stacking a p type semiconductor layer, an i type semiconductor layer serving as an amorphous semiconductor layer and an n type semiconductor layer. The first pin type photoelectric conversion layer includes the first portion located on a part of the surface of the substrate and the second portion located on another part of the surface of the substrate. The first portion is higher in concentration of at least one impurity element selected from oxygen, nitrogen and carbon than the second portion. The first portion is less in thickness than the second portion.

    摘要翻译： 提供一种光电转换装置，其包括设置在基板表面上的基板和pin型光电转换层。 针式光电转换层包括通过堆叠p型半导体层，用作非晶半导体层的i型半导体层和n型半导体层形成的第一引脚型光电转换层。 第一pin型光电转换层包括位于基板表面的一部分上的第一部分和位于基板表面的另一部分上的第二部分。 与第二部分相比，第一部分的浓度高于选自氧，氮和碳的至少一种杂质元素。 第一部分的厚度小于第二部分。