发明申请
- 专利标题: FLIP FERAM CELL AND METHOD TO FORM SAME
- 专利标题(中): 翻转毛细胞及其形成方法
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申请号: US11687000申请日: 2007-03-16
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公开(公告)号: US20070164337A1公开(公告)日: 2007-07-19
- 发明人: James Adkisson , Charles Black , Alfred Grill , Randy Mann , Deborah Neumayer , Wilbur Pricer , Katherine Saenger , Thomas Shaw
- 申请人: James Adkisson , Charles Black , Alfred Grill , Randy Mann , Deborah Neumayer , Wilbur Pricer , Katherine Saenger , Thomas Shaw
- 申请人地址: US NY Armonk 10504
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk 10504
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure.
公开/授权文献
- US07402857B2 Flip FERAM cell and method to form same 公开/授权日:2008-07-22
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