发明申请
- 专利标题： Structure and method for MOSFET gate electrode landing pad
- 专利标题（中）： MOSFET栅极电极着陆焊盘的结构和方法
-
申请号： US11333068申请日： 2006-01-17
-
公开(公告)号： US20070164357A1公开(公告)日： 2007-07-19
- 发明人: Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens , Keith Wong , Chih-Chao Yang
- 申请人： Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens , Keith Wong , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L27/01 ; H01L31/0392
摘要：
A transistor device and method of forming the same comprises a substrate; a first gate electrode over the substrate; a second gate electrode over the substrate; and a landing pad comprising a pair of flanged ends overlapping the second gate electrode, wherein the structure of the second gate electrode is discontinuous with the structure of the landing pad.
公开/授权文献
- US07528065B2 Structure and method for MOSFET gate electrode landing pad 公开/授权日：2009-05-05