发明申请
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US11645811申请日: 2006-12-27
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公开(公告)号: US20070166957A1公开(公告)日: 2007-07-19
- 发明人: Koujiro Kameyama , Akira Suzuki , Takahiro Oikawa
- 申请人: Koujiro Kameyama , Akira Suzuki , Takahiro Oikawa
- 专利权人: SANYO ELECTRIC CO., LTD,SANYO SEMICONDUCTOR CO., LTD,SANYO SEMICONDUCTOR MANUFACTURING CO. LTD.
- 当前专利权人: SANYO ELECTRIC CO., LTD,SANYO SEMICONDUCTOR CO., LTD,SANYO SEMICONDUCTOR MANUFACTURING CO. LTD.
- 优先权: JP2005-379130 20051228; JP2006-061712 20060307; JP2006-259288 20060925
- 主分类号: H01L21/30
- IPC分类号: H01L21/30
摘要:
The invention is directed to enhancement of reliability and a yield of a semiconductor device by a method of manufacturing the semiconductor device with a supporting body without making the process complex. A second insulation film, a semiconductor substrate, a first insulation film, and a passivation film are etched and removed in this order using a resist layer or a protection layer as a mask. By this etching, an adhesive layer is partially exposed in an opening. At this time, a number of semiconductor devices are separated in individual semiconductor dies. Then, as shown in FIG. 10, a solvent (e.g. alcohol or acetone) is supplied to the exposed adhesive layer through the opening to gradually reduce its adhesion and thereby a supporting body is removed from the semiconductor substrate.
公开/授权文献
- US07795115B2 Method of manufacturing semiconductor device 公开/授权日:2010-09-14
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