发明申请
US20070170088A1 Container, container producing method, substrate processing device, and semiconductor device producing method 有权
容器,容器制造方法,基板处理装置以及半导体装置的制造方法

  • 专利标题: Container, container producing method, substrate processing device, and semiconductor device producing method
  • 专利标题(中): 容器,容器制造方法,基板处理装置以及半导体装置的制造方法
  • 申请号: US10548877
    申请日: 2004-03-04
  • 公开(公告)号: US20070170088A1
    公开(公告)日: 2007-07-26
  • 发明人: Kazuhiro Shimura
  • 申请人: Kazuhiro Shimura
  • 优先权: JP2003-83179 20030325
  • 国际申请: PCT/JP04/02731 WO 20040304
  • 主分类号: B65D85/00
  • IPC分类号: B65D85/00 B65D81/28 C23C14/00 C23C16/00
Container, container producing method, substrate processing device, and semiconductor device producing method
摘要:
A pressure resistant case (22) is constructed in a rectangular parallelepiped box shape by assembling a bottom plate (61) and ceiling plate (62) and first side plate (63) and second side plate (64) and third side plate (65) and a fourth side plate (66) formed of thick aluminum plate and by welding on four sides by the TIG welding method. In the TIG welding of the ceiling plate (62) and the first side plate (63), the end surface on the side where a hollow section (72) of the ceiling plate (62) is formed, abuts against the main surface on the side where the locating section (71) of the first side plate (63) is formed. The edge near the hollow section (72) of the ceiling plate (62) is abutted against the locating section (71), and a fillet weld section (75) is formed by TIG welding on the corner section formed by the ceiling plate (62) and the locating section (71). The heat capacity of the hollow section of the ceiling plate and the locating section for TIG welding is small so that the fillet weld section can be formed even in aluminum plate possessing a high thermal conductivity. The vacuum performance, etc. of the pressure resistant case can be maintained since the slit formed between the contact surfaces is blocked by the fillet weld section.
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