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发明申请
US20070178679A1 Methods of implanting ions and ion sources used for same 审中-公开
植入离子和离子源的方法

Methods of implanting ions and ion sources used for same
摘要：
A method of implanting ions comprising generating C2B10Hx, ions from C2B10H12 and implanting the C2B10Hx, ions in a material. In some embodiments, the molecular weight of the C2B10Hx, ions is greater than 100 amu. In other embodiments, the molecular weight of the C2B10Hx, ions is approximately 132 to 144 amu or approximately 136 to 138 amu. An ion source is also disclosed comprising a chamber housing defining a chamber and a source feed gas supply configured to introduce C2B10H12 into the chamber, wherein the ion source is configured to ionize the source feed gas within the chamber into C2B10Hxions.
摘要（中）：

一种植入离子的方法，包括产生C 2 H 2 H x H 2，从C 2 H 2 N 将12 H 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 2离子注入到材料中。 在一些实施方案中，C 12 H 12 H 12 H 12的离子的分子量大于100amu。 在其它实施方案中，C 12 H 12 H 12离子的分子量为约132至144amu或约136至138amu 。 还公开了一种离子源，其包括限定腔室的腔室和构造成将C 2 H 2 H 12 H 12引入到 所述室，其中所述离子源被配置为将所述室内的所述源进料气体离子化为C 2 H 12 H 12 H 12。

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