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公开(公告)号：US20070178679A1
公开(公告)日：2007-08-02
申请号：US11504355
申请日：2006-08-15
申请人： Christopher Hatem , Anthony Renau , James E. White
发明人： Christopher Hatem , Anthony Renau , James E. White
IPC分类号： H01L21/425 , H01J37/08
CPC分类号： H01J37/08 , C23C14/48 , H01J37/3171 , H01L21/265
摘要： A method of implanting ions comprising generating C2B10Hx, ions from C2B10H12 and implanting the C2B10Hx, ions in a material. In some embodiments, the molecular weight of the C2B10Hx, ions is greater than 100 amu. In other embodiments, the molecular weight of the C2B10Hx, ions is approximately 132 to 144 amu or approximately 136 to 138 amu. An ion source is also disclosed comprising a chamber housing defining a chamber and a source feed gas supply configured to introduce C2B10H12 into the chamber, wherein the ion source is configured to ionize the source feed gas within the chamber into C2B10Hxions.
摘要翻译： 一种植入离子的方法，包括产生C 2 H 2 H x H 2，从C 2 H 2 N 将12 H 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 12 N 2离子注入到材料中。 在一些实施方案中，C 12 H 12 H 12 H 12的离子的分子量大于100amu。 在其它实施方案中，C 12 H 12 H 12离子的分子量为约132至144amu或约136至138amu 。 还公开了一种离子源，其包括限定腔室的腔室和构造成将C 2 H 2 H 12 H 12引入到 所述室，其中所述离子源被配置为将所述室内的所述源进料气体离子化为C 2 H 12 H 12 H 12。
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公开(公告)号：US09425027B2
公开(公告)日：2016-08-23
申请号：US13470731
申请日：2012-05-14
申请人： Ludovic Godet , Christopher Hatem , Deepak Ramappa , Xianfeng Lu , Anthony Renau , Patrick Martin
发明人： Ludovic Godet , Christopher Hatem , Deepak Ramappa , Xianfeng Lu , Anthony Renau , Patrick Martin
CPC分类号： C23C14/48 , B41J2/1606 , H01J37/32412 , H01J37/32422 , H01J37/32623
摘要： Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.
摘要翻译： 通过离子注入来影响材料性质的方法，例如通过使用具有等离子体护套改性剂的等离子体处理装置。 以这种方式，可以影响耐化学性，粘合性，疏水性和亲水性等特性。 这些方法可以应用于各种技术。 在某些情况下，离子注入用于制造打印头，以通过增加材料疏水性来减少堵塞。 在其他实施例中，使用离子注入来生产MEMS和NEMS装置，以改变流体通道和其它结构的性质。 此外，可以使用离子注入来影响材料对诸如酸的化学物质的抗性。
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公开(公告)号：US20070178678A1
公开(公告)日：2007-08-02
申请号：US11342183
申请日：2006-01-28
申请人： Christopher Hatem , Jonathan England , Larry Sneddon , Russell Low , Anthony Renau , Alexander Perel , Kourosh Saadatmand
发明人： Christopher Hatem , Jonathan England , Larry Sneddon , Russell Low , Anthony Renau , Alexander Perel , Kourosh Saadatmand
IPC分类号： H01L21/26
CPC分类号： H01J37/08 , C23C14/48 , H01J27/02 , H01J37/3171
摘要： Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.
摘要翻译： 提供了用于其的离子注入和离子源的方法。 该方法涉及从包含多个元素的源馈送气体产生离子。 例如，源原料气体可以包含硼和至少两个其它元素（例如，X a，B B，B和C）。 使用这种源进料气体可以产生比某些常规方法多的优点，包括当形成具有超浅结深度的注入区域时能够使用更高的注入能量和束流。 此外，在某些实施方案中，源进料气体的组成可以选择为在相对较高的温度（例如，大于350℃）下是热稳定的，其允许在许多常规离子源中使用这种气体（例如，间接加热 阴极（IHC），伯纳斯）在使用过程中产生这种温度。
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公开(公告)号：US20120288637A1
公开(公告)日：2012-11-15
申请号：US13470731
申请日：2012-05-14
申请人： Ludovic Godet , Christopher Hatem , Deepak Ramappa , Xianfeng Lu , Anthony Renau , Patrick Martin
发明人： Ludovic Godet , Christopher Hatem , Deepak Ramappa , Xianfeng Lu , Anthony Renau , Patrick Martin
IPC分类号： C23C14/48
CPC分类号： C23C14/48 , B41J2/1606 , H01J37/32412 , H01J37/32422 , H01J37/32623
摘要： Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.
摘要翻译： 通过离子注入来影响材料性质的方法，例如通过使用具有等离子体护套改性剂的等离子体处理装置。 以这种方式，可以影响耐化学性，粘合性，疏水性和亲水性等特性。 这些方法可以应用于各种技术。 在某些情况下，离子注入用于制造打印头，以通过增加材料疏水性来减少堵塞。 在其他实施例中，使用离子注入来生产MEMS和NEMS装置，以改变流体通道和其它结构的性质。 此外，可以使用离子注入来影响材料对诸如酸的化学物质的抗性。
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公开(公告)号：US20140037858A1
公开(公告)日：2014-02-06
申请号：US13563046
申请日：2012-07-31
申请人： Tristan Ma , Ludovic Godet , Christopher Hatem
发明人： Tristan Ma , Ludovic Godet , Christopher Hatem
IPC分类号： C23C14/48
CPC分类号： H01J37/32403 , C23C14/04 , C23C14/046 , C23C14/48 , H01J37/32357 , H01J37/32422 , H01J2237/3171
摘要： Methods of modulating a material's surface energies through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier, are disclosed. Two or more ion implants may be performed, where the implant regions of two of the ion implants overlap. The species implanted by a first implant may increase the hydrophobicity of the surface, wherein the species implanted by the second implant may decrease the hydrophobicity of the surface. In this way, a workpiece can be implanted such that different portions of its surface have different surface energies.
摘要翻译： 公开了通过离子注入来调制材料的表面能的方法，例如通过使用具有等离子体护套改性剂的等离子体处理装置。 可以执行两个或更多个离子植入物，其中两个离子植入物的植入区域重叠。 通过第一植入植入的物种可以增加表面的疏水性，其中由第二植入物植入的物种可以降低表面的疏水性。 以这种方式，可以植入工件，使得其表面的不同部分具有不同的表面能。
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6.发明授权公开(公告)号：US08461032B2
公开(公告)日：2013-06-11
申请号：US12397542
申请日：2009-03-04
IPC分类号： H01L21/425
CPC分类号： H01L33/025 , H01L21/26513 , H01L31/022441 , H01L31/0236 , H01L31/03529 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.
摘要翻译： 公开了通过利用两种不同的掺杂剂来调整衬底的掺杂剂分布的方法，每种掺杂剂具有不同的扩散率。 衬底可以是例如太阳能电池。 通过引入两种不同的掺杂剂，例如通过离子注入，炉扩散或糊状物，可以产生所需的掺杂剂分布。 此外，掺杂剂可以同时，部分同时或顺序地引入。 掺杂剂对优选由一种较轻的物质和一种较重的物质组成，其中较轻的物质具有较大的扩散系数。 例如，可以使用诸如硼和镓，硼和铟，磷和砷的掺杂物对，以及磷和锑。
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公开(公告)号：US20130045557A1
公开(公告)日：2013-02-21
申请号：US13587325
申请日：2012-08-16
申请人： Xianfeng Lu , Ludovic Godet , Christopher Hatem , John Hautala
发明人： Xianfeng Lu , Ludovic Godet , Christopher Hatem , John Hautala
IPC分类号： H01L21/22
摘要： An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.
摘要翻译： 公开了一种制造具有高导电性和低热导率的热电材料的改进方法。 在一个实施例中，通过在衬底上沉积多孔膜，将掺杂剂引入到多孔膜中并退火多孔膜以激活掺杂剂来制造热电材料。 在其它实施方案中，可以通过随后的掺杂剂离子注入到沉积的多孔膜中引入附加量的掺杂剂。
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公开(公告)号：US08372735B2
公开(公告)日：2013-02-12
申请号：US12339295
申请日：2008-12-19
IPC分类号： H01L21/26
CPC分类号： H01L21/26506 , H01L21/2236 , H01L21/26513 , H01L21/2658 , H01L29/6659 , H01L29/7833
摘要： A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.
摘要翻译： 公开了一种使用氦来形成超浅结的方法。 使用氦的植入前非晶化具有显着的优点。 例如，已经表明，掺杂剂将仅渗透到非晶态界面的衬底，而不再进一步。 因此，通过适当地确定氦的注入能量，可以准确地确定结深度。 增加剂量的掺杂剂简单地降低了衬底电阻，对结深度没有影响。 此外，氦的横向is is与植入能量和氦PAI的剂量率有关，因此横向扩散也可以基于氦PAI的注入能量和剂量率来确定。 因此，可以将掺杂剂精确地注入到侧壁间隔物或其它障碍物的下方。
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公开(公告)号：US20100041218A1
公开(公告)日：2010-02-18
申请号：US12339295
申请日：2008-12-19
IPC分类号： H01L21/266
CPC分类号： H01L21/26506 , H01L21/2236 , H01L21/26513 , H01L21/2658 , H01L29/6659 , H01L29/7833
摘要： A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.
摘要翻译： 公开了一种使用氦来形成超浅结的方法。 使用氦的植入前非晶化具有显着的优点。 例如，已经表明，掺杂剂将仅渗透到非晶态界面的衬底，而不再进一步。 因此，通过适当地确定氦的注入能量，可以准确地确定结深度。 增加剂量的掺杂剂简单地降低了衬底电阻，对结深度没有影响。 此外，氦的横向is is与植入能量和氦PAI的剂量率有关，因此横向扩散也可以基于氦PAI的注入能量和剂量率来确定。 因此，可以将掺杂剂精确地注入到侧壁间隔物或其它障碍物的下方。
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10.发明申请公开(公告)号：US20090227097A1
公开(公告)日：2009-09-10
申请号：US12397542
申请日：2009-03-04
IPC分类号： H01L21/22
CPC分类号： H01L33/025 , H01L21/26513 , H01L31/022441 , H01L31/0236 , H01L31/03529 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.
摘要翻译： 公开了通过利用两种不同的掺杂剂来调整衬底的掺杂剂分布的方法，每种掺杂剂具有不同的扩散率。 衬底可以是例如太阳能电池。 通过引入两种不同的掺杂剂，例如通过离子注入，炉扩散或糊状物，可以产生所需的掺杂剂分布。 此外，掺杂剂可以同时，部分同时或顺序地引入。 掺杂剂对优选由一种较轻的物质和一种较重的物质组成，其中较轻的物质具有较大的扩散系数。 例如，可以使用诸如硼和镓，硼和铟，磷和砷的掺杂物对，以及磷和锑。
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