发明申请
- 专利标题： Semiconductor constructions, methods of patterning photoresist, and methods of forming semiconductor constructions
- 专利标题（中）： 半导体结构，图案化光刻胶的方法以及形成半导体结构的方法
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申请号： US11341201申请日： 2006-01-27
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公开(公告)号： US20070178711A1公开(公告)日： 2007-08-02
- 发明人: Lucien Bissey , William Stanton
- 申请人： Lucien Bissey , William Stanton
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist.
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