发明申请
US20070181255A1 GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY METHOD
有权
气体供应系统，基板加工设备和气体供应方法
- 专利标题： GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY METHOD
- 专利标题（中）： 气体供应系统，基板加工设备和气体供应方法
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申请号： US11671115申请日： 2007-02-05
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公开(公告)号： US20070181255A1公开(公告)日： 2007-08-09
- 发明人: Shinichiro HAYASAKA , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
- 申请人： Shinichiro HAYASAKA , Ken Horiuchi , Fumiko Yagi , Takeshi Yokouchi
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-028566 20060206
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; C23F1/00 ; C23C16/00
摘要：
A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.
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