发明申请
US20070193687A1 Disturbance-free, recipe-controlled plasma processing system and method
审中-公开
无干扰，配方控制等离子体处理系统和方法
- 专利标题： Disturbance-free, recipe-controlled plasma processing system and method
- 专利标题（中）： 无干扰，配方控制等离子体处理系统和方法
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申请号： US11783653申请日： 2007-04-11
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公开(公告)号： US20070193687A1公开(公告)日： 2007-08-23
- 发明人: Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
- 申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
- 优先权： JP2001-198830 20010629
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
A plasma processing control system includes a plasma processing apparatus for generating plasma within a vacuum processing chamber and performing a processing operation over a sample accommodated within the vacuum processing chamber using radicals and ions within the plasma, a pre-measuring instrument which measures a shape of the sample before processing, a post-measuring instrument which measures a shape of the sample after the processing, a parameter changer provided with at least one optimum recipe model for calculating a target process parameter, and a model changer for modifying the optimum recipe model, thereby updating a recipe parameter for each etching.
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