发明申请
- 专利标题: Diode
- 专利标题(中): 二极管
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申请号: US11785808申请日: 2007-04-20
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公开(公告)号: US20070194364A1公开(公告)日: 2007-08-23
- 发明人: Mizue Kitada , Kosuke Oshima , Toru Kurosaki , Shinji Kunori , Akihiko Sugai
- 申请人: Mizue Kitada , Kosuke Oshima , Toru Kurosaki , Shinji Kunori , Akihiko Sugai
- 申请人地址: JP Tokyo
- 专利权人: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 当前专利权人: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2001-260869 20010830
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
A transistor and diode having a low resistance and a high breakdown voltage are provided. When the bottom portion of a narrow trench having the shape of a rectangular parallelepiped is filled with a semiconductor grown by epitaxial method, a {1 0 0} plane is exposed at the sidewalls of the narrow trench. The semiconductor is epitaxially grown at a constant rate on each sidewall of the narrow trench; thereby, creating a filling material with no voids present therein. The concentration and width of the filling material are optimized. This allows the portion located between the filling materials in a drain layer to be completely depleted when the filling material is completely depleted; thereby, making it possible to establish an electric field having a constant strength in the depletion layer extended in the drain layer.
公开/授权文献
- US07855413B2 Diode with low resistance and high breakdown voltage 公开/授权日:2010-12-21
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