发明申请
US20070195295A1 Mask pattern data forming method, photomask and method of manufacturing semiconductor device
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掩模图案数据形成方法,光掩模和半导体器件的制造方法
- 专利标题: Mask pattern data forming method, photomask and method of manufacturing semiconductor device
- 专利标题(中): 掩模图案数据形成方法,光掩模和半导体器件的制造方法
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申请号: US11357034申请日: 2006-02-21
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公开(公告)号: US20070195295A1公开(公告)日: 2007-08-23
- 发明人: Tadahito Fujisawa , Takeshi Ito , Takashi Obara
- 申请人: Tadahito Fujisawa , Takeshi Ito , Takashi Obara
- 优先权: JP2005-044257 20060221
- 主分类号: G03B27/42
- IPC分类号: G03B27/42
摘要:
There is disclosed a mask pattern data forming method comprising arranging patterns with a minimum pitch in parallel or vertically in an X or Y direction, where directions diagonally connected with respect to respective centers of gravity of the double-pole or the quadrupole illumination are defined as the X and Y direction, classifying patterns or pattern groups with a pitch larger than the patterns with the minimum pitch into a pattern type with a pitch whose exposure margin is larger than that of the patterns with the minimum pitch and a pattern type with a pitch whose exposure margin is smaller than that of the patterns with the minimum pitch; and arranging patterns or pattern groups classified into the pattern type whose exposure margin is smaller than that of the patterns with the minimum pitch in a direction deflected by 45° or 135° from the patterns with the minimum pitch.
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