发明申请
US20070195295A1 Mask pattern data forming method, photomask and method of manufacturing semiconductor device 失效
掩模图案数据形成方法,光掩模和半导体器件的制造方法

  • 专利标题: Mask pattern data forming method, photomask and method of manufacturing semiconductor device
  • 专利标题(中): 掩模图案数据形成方法,光掩模和半导体器件的制造方法
  • 申请号: US11357034
    申请日: 2006-02-21
  • 公开(公告)号: US20070195295A1
    公开(公告)日: 2007-08-23
  • 发明人: Tadahito FujisawaTakeshi ItoTakashi Obara
  • 申请人: Tadahito FujisawaTakeshi ItoTakashi Obara
  • 优先权: JP2005-044257 20060221
  • 主分类号: G03B27/42
  • IPC分类号: G03B27/42
Mask pattern data forming method, photomask and method of manufacturing semiconductor device
摘要:
There is disclosed a mask pattern data forming method comprising arranging patterns with a minimum pitch in parallel or vertically in an X or Y direction, where directions diagonally connected with respect to respective centers of gravity of the double-pole or the quadrupole illumination are defined as the X and Y direction, classifying patterns or pattern groups with a pitch larger than the patterns with the minimum pitch into a pattern type with a pitch whose exposure margin is larger than that of the patterns with the minimum pitch and a pattern type with a pitch whose exposure margin is smaller than that of the patterns with the minimum pitch; and arranging patterns or pattern groups classified into the pattern type whose exposure margin is smaller than that of the patterns with the minimum pitch in a direction deflected by 45° or 135° from the patterns with the minimum pitch.
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