公开(公告)号：US20070195295A1

公开(公告)日：2007-08-23

申请号：US11357034

申请日：2006-02-21

申请人： Tadahito Fujisawa ,  Takeshi Ito ,  Takashi Obara

发明人： Tadahito Fujisawa ,  Takeshi Ito ,  Takashi Obara

IPC分类号： G03B27/42

CPC分类号： G03F7/70425 ,  G03F1/70 ,  G03F7/70125

摘要： There is disclosed a mask pattern data forming method comprising arranging patterns with a minimum pitch in parallel or vertically in an X or Y direction, where directions diagonally connected with respect to respective centers of gravity of the double-pole or the quadrupole illumination are defined as the X and Y direction, classifying patterns or pattern groups with a pitch larger than the patterns with the minimum pitch into a pattern type with a pitch whose exposure margin is larger than that of the patterns with the minimum pitch and a pattern type with a pitch whose exposure margin is smaller than that of the patterns with the minimum pitch; and arranging patterns or pattern groups classified into the pattern type whose exposure margin is smaller than that of the patterns with the minimum pitch in a direction deflected by 45° or 135° from the patterns with the minimum pitch.

摘要翻译： 公开了一种掩模图案数据形成方法，包括在X或Y方向上平行或垂直布置具有最小间距的图案，其中相对于双极或四极照明的相应重心倾斜连接的方向被定义为 X和Y方向，将具有最小间距的图案的间距大于间距的图案分类为具有曝光余量大于具有最小间距的图案的间距的图案类型的图案或图案组，以及具有间距的图案类型 其曝光余量小于具有最小间距的图案的曝光裕度; 并且排列分类为其曝光余量小于距离具有最小间距的图案偏转45°或135°的方向上具有最小间距的图案的图案类型的图案或图案组。

公开(公告)号：US07426711B2

公开(公告)日：2008-09-16

申请号：US11357034

申请日：2006-02-21

申请人： Tadahito Fujisawa ,  Takeshi Ito ,  Takashi Obara

发明人： Tadahito Fujisawa ,  Takeshi Ito ,  Takashi Obara

IPC分类号： G06F17/50

CPC分类号： G03F7/70425 ,  G03F1/70 ,  G03F7/70125

摘要： There is disclosed a mask pattern data forming method comprising arranging patterns with a minimum pitch in parallel or vertically in an X or Y direction, where directions diagonally connected with respect to respective centers of gravity of the double-pole or the quadrupole illumination are defined as the X and Y direction, classifying patterns or pattern groups with a pitch larger than the patterns with the minimum pitch into a pattern type with a pitch whose exposure margin is larger than that of the patterns with the minimum pitch and a pattern type with a pitch whose exposure margin is smaller than that of the patterns with the minimum pitch; and arranging patterns or pattern groups classified into the pattern type whose exposure margin is smaller than that of the patterns with the minimum pitch in a direction deflected by 45° or 135° from the patterns with the minimum pitch.

摘要翻译： 公开了一种掩模图案数据形成方法，包括在X或Y方向上平行或垂直布置具有最小间距的图案，其中相对于双极或四极照明的相应重心倾斜连接的方向被定义为 X和Y方向，将具有最小间距的图案的间距大于间距的图案分类为具有曝光余量大于具有最小间距的图案的间距的图案类型的图案或图案组，以及具有间距的图案类型 其曝光余量小于具有最小间距的图案的曝光裕度; 并且排列分类为其曝光余量小于距离具有最小间距的图案偏转45°或135°的方向上具有最小间距的图案的图案类型的图案或图案组。

公开(公告)号：US20080014510A1

公开(公告)日：2008-01-17

申请号：US11777481

申请日：2007-07-13

申请人： Tadahito FUJISAWA ,  Takeshi Ito ,  Yoshihiro Yanai ,  Atsushi Maesono ,  Kazuya Fukuhara

发明人： Tadahito FUJISAWA ,  Takeshi Ito ,  Yoshihiro Yanai ,  Atsushi Maesono ,  Kazuya Fukuhara

IPC分类号： G03C5/00 ,  G06F17/50 ,  G03F1/00

CPC分类号： G03F1/32 ,  G03F1/36

摘要： A photomask designing apparatus designs a photomask provided with a light transmission region through which exposure light with a predetermined wavelength transmits, a semi-transmission region having an optical characteristic of 180-degree phase shift and a light shielding region shielding exposure light. The semi-transmission region has a width set so as to be larger as a distance from the semi-transmission region to the light shielding region becomes short with respect to a region in which the semi-transmission region, the light transmission region and the light shielding region are sequentially formed outward from an exposure light passing region side. The width of the semi-transmission region is set so as to be smaller as the distance becomes long.

摘要翻译： 光掩模设计装置设计具有透光区域的光掩模，具有预定波长的曝光光透过的光掩模，具有180度相移的光学特性的半透射区域和遮光区域屏蔽曝光光。 半透射区域的宽度被设定为随着从半透射区域到遮光区域的距离相对于半透射区域，光透射区域和光线的区域变短而变大 屏蔽区域从曝光光通过区域侧向外顺序地形成。 半透射区域的宽度被设定为随着距离变长而变小。

公开(公告)号：US07669172B2

公开(公告)日：2010-02-23

申请号：US12050764

申请日：2008-03-18

申请人： Takeshi Ito ,  Satoshi Tanaka ,  Toshiya Kotani ,  Tadahito Fujisawa ,  Koji Hashimoto

发明人： Takeshi Ito ,  Satoshi Tanaka ,  Toshiya Kotani ,  Tadahito Fujisawa ,  Koji Hashimoto

IPC分类号： G06F17/50

CPC分类号： G03F1/00

摘要： A pattern creation method, including laying out data of a most extreme end pattern of integrated circuit patterns on a first layer and laying out data of the integrated circuit patterns excluding the most extreme end pattern on a second layer, extracting data of a first most proximate pattern being most proximate to the most extreme end pattern from the second layer and converting the extracted data to a third layer, generating data of a contacting pattern which contacts both the first most proximate pattern and the most extreme end pattern in a fourth layer, generating data of a non-overlapping pattern of the contacting pattern excluding overlapping portions with the most extreme end pattern and the first most proximate pattern in a fifth layer, extracting data of a second most proximate pattern being most proximate to the non-overlapping pattern and converting the extracted data to the first layer.

摘要翻译： 一种图案创建方法，包括在第一层上布置集成电路图案的最极端格式的数据，并且在第二层上布置不包括最末端图案的集成电路图案的数据，提取第一最接近的数据 图案最接近于来自第二层的最末端图案，并将所提取的数据转换为第三层，产生在第四层中接触第一最近图案和最末端图案的接触图案的数据，产生 接触图案的非重叠图案的数据，不包括在第五层中具有最末端图案和最前端图案和第一最近图案的重叠部分，提取最接近图案的第二最接近图案的数据，其最接近非重叠图案并且转换 提取的数据到第一层。

公开(公告)号：US20060093926A1

公开(公告)日：2006-05-04

申请号：US11259069

申请日：2005-10-27

申请人： Tadahito Fujisawa ,  Takeshi Ito ,  Toshiya Kotani

发明人： Tadahito Fujisawa ,  Takeshi Ito ,  Toshiya Kotani

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F7/70441 ,  G03F1/36

摘要： A mask pattern data generating method is disclosed, which comprises preparing mask pattern data which corresponds to a design pattern including a pair of line patterns formed of two line patterns, and disposing an auxiliary pattern which is un-transferable to a resist film at a center of a space region between the pair of line patterns, in which the disposing of the auxiliary pattern includes obtaining a shape of the auxiliary pattern which meets formulae in which a width in the short edge direction of the auxiliary pattern, a space width between the auxiliary pattern and one of the pair of line patterns, a wavelength of an exposure light emitted by a projection aligner using a photo mask at exposure, and a numerical apertures of a projection lens of the projection aligner are defined as parameters, and disposing the obtained auxiliary pattern at the center of the space region.

公开(公告)号：US20050123858A1

公开(公告)日：2005-06-09

申请号：US10969174

申请日：2004-10-21

申请人： Takeshi Ito ,  Koji Hashimoto ,  Tadahito Fujisawa

发明人： Takeshi Ito ,  Koji Hashimoto ,  Tadahito Fujisawa

IPC分类号： G03F7/00 ,  G03F7/20 ,  G03F7/40 ,  H01L21/027 ,  H01L21/28

CPC分类号： G03F7/40 ,  G03F7/0035

摘要： A method for forming a pattern having holes arrayed with spacing less than resolution of exposure tool, includes forming first resist pattern including first resist openings having width and spacing equal to or greater than the resolution, in first resist film coated on underlying film. First shrank pattern including first holes having dimension equal to or less than the resolution in the underlying film is formed by first shrink process to the first resist pattern. Second resist pattern including second resist openings arrayed between the first holes having width equal to or greater than the resolution, is formed in second resist film coated on the underlying film. Second shrank pattern including second holes having dimension equal to or less than the resolution in the underlying film is formed by second shrink process to the second resist pattern.

摘要翻译： 一种用于形成具有间隔小于曝光工具的分辨率的孔的图案的方法，包括在涂覆在下面的膜上的第一抗蚀剂膜中形成包括具有等于或大于分辨率的宽度和间距的第一抗蚀剂开口的第一抗蚀剂图案。 通过对第一抗蚀剂图案进行第一收缩处理，形成包括尺寸等于或小于底层膜中的分辨率的第一孔的第一缩小图案。 第二抗蚀剂图案包括排列在宽度等于或大于分辨率的第一孔之间的第二抗蚀剂孔，形成在涂覆在下面的膜上的第二抗蚀剂膜中。 通过对第二抗蚀剂图案的第二收缩工艺形成包括尺寸等于或小于底层膜中的分辨率的第二孔的第二缩小图案。

公开(公告)号：US07585597B2

公开(公告)日：2009-09-08

申请号：US11259069

申请日：2005-10-27

申请人： Tadahito Fujisawa ,  Takeshi Ito ,  Toshiya Kotani

发明人： Tadahito Fujisawa ,  Takeshi Ito ,  Toshiya Kotani

IPC分类号： G03F1/00

CPC分类号： G03F7/70441 ,  G03F1/36

摘要： A mask pattern data generating method is disclosed, which comprises preparing mask pattern data which corresponds to a design pattern including a pair of line patterns formed of two line patterns, and disposing an auxiliary pattern which is un-transferable to a resist film at a center of a space region between the pair of line patterns, in which the disposing of the auxiliary pattern includes obtaining a shape of the auxiliary pattern which meets formulae in which a width in the short edge direction of the auxiliary pattern, a space width between the auxiliary pattern and one of the pair of line patterns, a wavelength of an exposure light emitted by a projection aligner using a photo mask at exposure, and a numerical apertures of a projection lens of the projection aligner are defined as parameters, and disposing the obtained auxiliary pattern at the center of the space region.

摘要翻译： 公开了一种掩模图案数据生成方法，其包括制备对应于包括由两条线图案形成的一对线图案的设计图案的掩模图案数据，并且将不可转印到辅助图案的抗蚀剂膜设置在中心 在一对线图案之间的空间区域中，其中辅助图案的设置包括获得辅助图案的形状，其满足辅助图案的短边方向上的宽度，辅助图案的短边方向之间的空间宽度 图案和一对线图案中的一个，曝光时由使用光掩模的投影对准器发射的曝光光的波长和投影对准器的投影透镜的数值孔径被定义为参数，并且将所获得的辅助 模式在空间区域的中心。

公开(公告)号：US20080235650A1

公开(公告)日：2008-09-25

申请号：US12050764

申请日：2008-03-18

申请人： Takeshi Ito ,  Satoshi Tanaka ,  Toshiya Kotani ,  Tadahito Fujisawa ,  Koji Hashimoto

发明人： Takeshi Ito ,  Satoshi Tanaka ,  Toshiya Kotani ,  Tadahito Fujisawa ,  Koji Hashimoto

IPC分类号： G06F17/50

CPC分类号： G03F1/00

摘要： A pattern creation method, including laying out data of a most extreme end pattern of integrated circuit patterns on a first layer and laying out data of the integrated circuit patterns excluding the most extreme end pattern on a second layer, extracting data of a first most proximate pattern being most proximate to the most extreme end pattern from the second layer and converting the extracted data to a third layer, generating data of a contacting pattern which contacts both the first most proximate pattern and the most extreme end pattern in a fourth layer, generating data of a non-overlapping pattern of the contacting pattern excluding overlapping portions with the most extreme end pattern and the first most proximate pattern in a fifth layer, extracting data of a second most proximate pattern being most proximate to the non-overlapping pattern and converting the extracted data to the first layer.

摘要翻译： 一种图案创建方法，包括在第一层上布置集成电路图案的最极端格式的数据，并且在第二层上布置不包括最末端图案的集成电路图案的数据，提取第一最接近的数据 图案最接近于来自第二层的最末端图案，并将所提取的数据转换为第三层，产生在第四层中接触第一最近图案和最末端图案的接触图案的数据，产生 接触图案的非重叠图案的数据，不包括在第五层中具有最末端图案和最前端图案和第一最近图案的重叠部分，提取最接近图案的第二最接近图案的数据，其最接近非重叠图案并且转换 提取的数据到第一层。

公开(公告)号：US09756242B2

公开(公告)日：2017-09-05

申请号：US13902124

申请日：2013-05-24

申请人： Toru Harada ,  Hiroyuki Satoh ,  Noriyuki Terao ,  Yoshiaki Irino ,  Tomonori Tanaka ,  Nozomi Imae ,  Hirokazu Takenaka ,  Hideaki Yamamoto ,  Kensuke Masuda ,  Satoshi Sawaguchi ,  Satoshi Taneichi ,  Masanori Watanabe ,  Takeshi Ito

发明人： Toru Harada ,  Hiroyuki Satoh ,  Noriyuki Terao ,  Yoshiaki Irino ,  Tomonori Tanaka ,  Nozomi Imae ,  Hirokazu Takenaka ,  Hideaki Yamamoto ,  Kensuke Masuda ,  Satoshi Sawaguchi ,  Satoshi Taneichi ,  Masanori Watanabe ,  Takeshi Ito

IPC分类号： H04N5/232 ,  G06F17/30 ,  G06F3/0481

CPC分类号： H04N5/23238 ,  G06F3/04817 ,  G06F17/30274

摘要： A communication terminal displays thumbnails for predetermined-region images in a panoramic image and accepts a selection of a predetermined thumbnail so as to display the predetermined-region image corresponding to the accepted thumbnail. This brings about an effect that a user can easily find a desired panoramic image or a desired predetermined-region image in the panoramic image.

公开(公告)号：US08562194B2

公开(公告)日：2013-10-22

申请号：US13009042

申请日：2011-01-19

申请人： Masahiro Nishio ,  Takeshi Ito ,  Hiroyuki Kamee

发明人： Masahiro Nishio ,  Takeshi Ito ,  Hiroyuki Kamee

IPC分类号： F21V7/04 ,  G02B7/02 ,  G05D25/00

CPC分类号： G02B6/262 ,  G02B6/0003 ,  G02B6/0008

摘要： A wavelength conversion unit includes a wavelength conversion member that transmits a part of incident excitation light and converts a part of the excitation light into wavelength-converted light having a wavelength different from a wavelength of the excitation light to emit the wavelength-converted light. The excitation light has an intensity distribution in which an intensity is maximum at the center and decreases as getting apart from the center. A thickness of the wavelength conversion member at a portion into which light at the center of the intensity distribution of the excitation light enters is larger than those at any other portions.

摘要翻译： 波长转换单元包括：波长转换部件，其传输入射激发光的一部分，并将一部分激发光转换为具有与激发光的波长不同的波长的波长转换光，以发射波长转换的光。 激发光具有在中心处强度最大的强度分布，并且随着与中心分离而减小。 在激发光的强度分布的中心的光入射的部分处的波长转换构件的厚度大于任何其它部分处的光的厚度。