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公开(公告)号：US07855047B2
公开(公告)日：2010-12-21
申请号：US12654292
申请日：2009-12-16
CPC分类号： G03F7/70466 , G03F1/44 , G03F1/70 , G03F7/70625
摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.
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公开(公告)号：US07700997B2
公开(公告)日：2010-04-20
申请号：US11346293
申请日：2006-02-03
申请人： Takuya Futatsuyama , Toshiya Kotani , Hiromitsu Mashita , Atsushi Maesono , Ayako Nakano , Tadahito Fujisawa
发明人： Takuya Futatsuyama , Toshiya Kotani , Hiromitsu Mashita , Atsushi Maesono , Ayako Nakano , Tadahito Fujisawa
IPC分类号： G11C16/04
CPC分类号： H01L27/115 , H01L27/11517
摘要： According to this invention, the NAND type flash memory of high reliability is realized. It provides a semiconductor memory device comprising: a plurality of memory cells; a plurality of word lines formed by a first gate wiring layer; a plurality of first transistors for providing voltages to said word lines; and electrical connections for connection said word lines and sources or drains of said first transistors, said electrical connections being formed of both first wirings of a first wiring layer formed above said first gate wiring layer and second wirings of a second wiring layers formed above said first wiring layer.
摘要翻译： 根据本发明，实现了高可靠性的NAND型闪速存储器。 它提供一种半导体存储器件，包括：多个存储单元; 由第一栅极布线层形成的多个字线; 用于向所述字线提供电压的多个第一晶体管; 以及用于连接所述字线和所述第一晶体管的源极或漏极的电连接，所述电连接由形成在所述第一栅极布线层上方的第一布线层的第一布线和形成在所述第一晶体管上方的第二布线层的第二布线形成 接线层。
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3.发明授权公开(公告)号：US07384712B2
公开(公告)日：2008-06-10
申请号：US10832995
申请日：2004-04-28
申请人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
发明人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
IPC分类号： G03F1/00
摘要： A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.
摘要翻译： 一种光掩模，其形成有使用曝光装置转印到基板的图案，所述光掩模包括具有由屏蔽部分或半透明膜围绕并沿着一个方向布置的三个或更多孔图案的图案行和辅助图案包围 通过屏蔽部分或半透明膜并具有纵向方向和纬度方向，辅助图案位于与图案行在与该一个方向正交的方向上特定距离处，辅助图案的纵向方向基本上平行于 一个方向，辅助图案的纵向长度等于或大于图案行的纵向长度，辅助图案不被转印到基底。
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4.发明授权Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method 有权晶片平坦度评估方法，执行评估方法的晶片平整度评估装置，使用评估方法的晶片制造方法，使用评估方法的晶片质量保证方法，使用评估方法的半导体器件制造方法和使用由 评估方法公开(公告)号：US07365830B2
公开(公告)日：2008-04-29
申请号：US11710410
申请日：2007-02-26
申请人： Tadahito Fujisawa , Soichi Inoue , Makoto Kobayashi , Masashi Ichikawa , Tsuneyuki Hagiwara , Kenichi Kodama
发明人： Tadahito Fujisawa , Soichi Inoue , Makoto Kobayashi , Masashi Ichikawa , Tsuneyuki Hagiwara , Kenichi Kodama
CPC分类号： G01B21/30 , G01B11/306 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.
摘要翻译： 公开了一种晶片平坦度评估方法，其包括测量晶片的前后表面形状。 测量的晶圆正面分为几个部位。 然后，根据要评估的位置的位置选择平坦度计算方法，并获得晶片表面的平坦度。
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5.发明申请PHOTOMASK DESIGNING APPARATUS, PHOTOMASK, PHOTOMASK DESIGNING METHOD, PHOTOMASK DESIGNING PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM ON WHICH THE PHOTOMASK DESIGNING PROGRAM IS STORED 审中-公开光电设计设计，照相机，光电设计方法，光电设计设计程序和计算机可读存储介质，其中存储有光电设计程序公开(公告)号：US20080014510A1
公开(公告)日：2008-01-17
申请号：US11777481
申请日：2007-07-13
摘要： A photomask designing apparatus designs a photomask provided with a light transmission region through which exposure light with a predetermined wavelength transmits, a semi-transmission region having an optical characteristic of 180-degree phase shift and a light shielding region shielding exposure light. The semi-transmission region has a width set so as to be larger as a distance from the semi-transmission region to the light shielding region becomes short with respect to a region in which the semi-transmission region, the light transmission region and the light shielding region are sequentially formed outward from an exposure light passing region side. The width of the semi-transmission region is set so as to be smaller as the distance becomes long.
摘要翻译： 光掩模设计装置设计具有透光区域的光掩模，具有预定波长的曝光光透过的光掩模，具有180度相移的光学特性的半透射区域和遮光区域屏蔽曝光光。 半透射区域的宽度被设定为随着从半透射区域到遮光区域的距离相对于半透射区域，光透射区域和光线的区域变短而变大 屏蔽区域从曝光光通过区域侧向外顺序地形成。 半透射区域的宽度被设定为随着距离变长而变小。
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公开(公告)号：US07175943B2
公开(公告)日：2007-02-13
申请号：US10725571
申请日：2003-12-03
IPC分类号： G01F9/00
CPC分类号： G03F7/70466 , G03F1/44 , G03F1/70 , G03F7/70625
摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.
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公开(公告)号：US07108945B2
公开(公告)日：2006-09-19
申请号：US10396309
申请日：2003-03-26
申请人： Takumichi Sutani , Kyoko Izuha , Tadahito Fujisawa , Soichi Inoue
发明人： Takumichi Sutani , Kyoko Izuha , Tadahito Fujisawa , Soichi Inoue
IPC分类号： G01F9/00
CPC分类号： G03F7/70641 , G03F1/44
摘要： A photomask has a device pattern, which has an opening portion and a mask portion, and either a focus monitor pattern or an exposure dose monitor pattern, which has an opening portion and a mask portion and which has the same plane pattern shape as at least a partial region of a device pattern. The phase difference in transmitted exposure light between the opening portion and the mask portion of the focus monitor pattern is different from that between the opening portion and the mask portion of the device pattern. The opening portion of the exposure dose monitor pattern has a different exposure dose transmittance from that of the opening portion of the device pattern.
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8.发明申请公开(公告)号：US20050003305A1
公开(公告)日：2005-01-06
申请号：US10832995
申请日：2004-04-28
申请人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
发明人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
摘要： A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.
摘要翻译： 一种光掩模，其形成有使用曝光装置转印到基板的图案，所述光掩模包括具有由屏蔽部分或半透明膜围绕并沿着一个方向布置的三个或更多孔图案的图案行和辅助图案包围 通过屏蔽部分或半透明膜并具有纵向方向和纬度方向，辅助图案位于与图案行在与该一个方向正交的方向上特定距离处，辅助图案的纵向方向基本上平行于 一个方向，辅助图案的纵向长度等于或大于图案行的纵向长度，辅助图案不被转印到基底。
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公开(公告)号：US5673103A
公开(公告)日：1997-09-30
申请号：US703530
申请日：1996-08-23
申请人： Soichi Inoue , Satoshi Tanaka , Tadahito Fujisawa
发明人： Soichi Inoue , Satoshi Tanaka , Tadahito Fujisawa
CPC分类号： G03F7/70058 , G03F7/70075 , G03F7/70125 , G03F7/70241 , G03F7/7025 , G03F7/70425 , G03F7/70566
摘要： An exposure apparatus for reducing/projecting a plurality of patterns of a photomask, which are elongated in at least two different directions, onto a substrate through the photomask includes a polarized light source for illuminating the photomask, a polarization control unit for changing the direction of polarization of polarized light from the polarized light source, a slit filter arranged at a position where the polarized light is focused and having a slit-like opening portion elongated in a direction perpendicular to the direction of polarization of the polarized light, the slit filter transmitting polarized light, of the polarized light passing through the photomask, which has the direction of polarization, a unit for changing the direction of the opening portion of the slit filter in synchronism with a change in direction of polarization of polarized light which is made by the polarization control unit, and a unit for illuminating the photomask with the polarized light at each position where the direction of the pattern becomes parallel to the direction of polarization of the polarized light, thereby exposing a pattern, formed on the photomask, onto the substrate at the angle of a direction of polarization perpendicular to an incident plane of light incident on the substrate.
摘要翻译： 用于将通过光掩模在至少两个不同方向上延伸的光掩模的多个图案减少/投影到基板上的曝光装置包括用于照射光掩模的偏振光源，用于改变光掩模的方向的偏振控制单元 偏振光从偏振光源的偏振光;狭缝滤光器，其设置在偏振光聚焦的位置处，并且具有在与偏振光的偏振方向垂直的方向上延伸的狭缝状开口部，狭缝滤光器透射 通过具有偏振方向的光掩模的偏振光的偏振光与由偏振光的偏振光的偏振方向的变化同步地改变狭缝滤光片的开口部的方向的单元 偏光控制单元，以及用于在每个po处以偏振光照射光掩模的单元 其中图案的方向变得与偏振光的偏振方向平行，从而将形成在光掩模上的图案以垂直于入射到该光源的光的入射平面的偏振方向的角度暴露在基板上 基质。
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公开(公告)号：US07682757B2
公开(公告)日：2010-03-23
申请号：US11401837
申请日：2006-04-12
IPC分类号： G03F1/00
摘要： A pattern layout for forming an integrated circuit includes a first device pattern, a second device pattern, and an auxiliary pattern. The first device pattern includes a line and a space alternately arrayed on a fixed pitch having regular intervals in a first direction. The second device pattern is disposed on the fixed pitch and separated from the first device pattern in the first direction. The second device pattern has a pattern width an odd-number times larger than the regular intervals of the fixed pitch, wherein the odd-number is set to be three or more. The auxiliary pattern is disposed on the fixed pitch and within the second device pattern and configured not to be resolved by light exposure.
摘要翻译： 用于形成集成电路的图案布局包括第一器件图案，第二器件图案和辅助图案。 第一装置图案包括在第一方向上具有规则间隔的固定间距交替排列的线和空间。 第二装置图案设置在固定节距上并且在第一方向上与第一装置图案分离。 第二装置图案的图案宽度比固定间距的规则间隔大奇数倍，其中奇数被设定为三个以上。 辅助图案设置在固定间距上并且在第二装置图案内并且被配置为不被曝光解决。
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