Invention Application
- Patent Title: HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY
- Patent Title (中): 高容量低成本多状态磁记忆体
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Application No.: US11678515Application Date: 2007-02-23
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Publication No.: US20070201265A1Publication Date: 2007-08-30
- Inventor: Rajiv Yadav Ranjan , Mahmud Assar , Parviz Keshtbod
- Applicant: Rajiv Yadav Ranjan , Mahmud Assar , Parviz Keshtbod
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
One embodiment of the present invention includes a multi-state current-switching magnetic memory element having a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.
Public/Granted literature
- US08058696B2 High capacity low cost multi-state magnetic memory Public/Granted day:2011-11-15
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