- 专利标题： Method for fabricating semiconductor device
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申请号： US11783131申请日： 2007-04-06
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公开(公告)号： US20070202666A1公开(公告)日： 2007-08-30
- 发明人: Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
- 申请人： Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 优先权： JP2000-350934 20001117
- 主分类号： H01L21/36
- IPC分类号： H01L21/36
摘要：
After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.
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