Method for fabricating semiconductor device
    2.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07273820B2

    公开(公告)日:2007-09-25

    申请号:US10399755

    申请日:2001-10-09

    IPC分类号: H01L21/469

    CPC分类号: H01L21/76819 H01L21/31051

    摘要: After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.

    摘要翻译: 在通过向形成有阶梯层的基板的表面供给流动性的材料形成流体膜之后,通过具有平面的按压面的按压部件将流体膜压在基板上,使得流体膜的表面为 平面化 在该状态下加热流体膜,由此固化,形成具有平坦表面的固化膜。

    Method for forming semiconductor device
    3.
    发明授权
    Method for forming semiconductor device 有权
    半导体器件形成方法

    公开(公告)号:US07291554B2

    公开(公告)日:2007-11-06

    申请号:US11090885

    申请日:2005-03-28

    IPC分类号: H01L21/28

    摘要: A method for forming a semiconductor device includes the steps of forming a flowable film made of an insulating material with flowability; forming a first concave portion in the flowable film through transfer of a convex portion of a pressing face of a pressing member by pressing the pressing member against the flowable film; forming a solidified film having the first concave portion by solidifying the flowable film through annealing at a first temperature with the pressing member pressed against the flowable film; forming a burnt film having the first concave portion by burning the solidified film through annealing at a second temperature higher than the first temperature; forming a second concave portion connected at least to the first concave portion in the burnt film by forming, on the burnt film, a mask having an opening for forming the second concave portion and etching the burnt film by using the mask; and forming a plug and a metal interconnect by filing the first concave portion and the second concave portion of the burnt film with a conductive film.

    摘要翻译: 一种形成半导体器件的方法包括以下步骤:形成由具有流动性的绝缘材料制成的可流动膜; 通过将所述按压部件压靠在所述可流动膜上,通过使按压部件的按压面的凸部转移而在所述可流动膜中形成第一凹部; 通过使所述挤压构件压靠在所述可流动膜上,在第一温度下使所述可流动膜固化,形成具有所述第一凹部的固化膜; 通过在比所述第一温度高的第二温度退火来烧结所述固化膜,形成具有所述第一凹部的燃烧膜; 通过在所述燃烧膜上形成具有用于形成所述第二凹部的开口的掩模,并且通过使用所述掩模来蚀刻所述燃烧膜,形成至少与所述燃烧膜中的所述第一凹部连接的第二凹部; 以及通过用导电膜填充所述燃烧膜的所述第一凹部和所述第二凹部来形成插塞和金属互连。

    Method for forming semiconductor device
    4.
    发明申请
    Method for forming semiconductor device 审中-公开
    半导体器件形成方法

    公开(公告)号:US20050191860A1

    公开(公告)日:2005-09-01

    申请号:US11102445

    申请日:2005-04-07

    摘要: A method for forming a semiconductor device includes the steps of forming, on a substrate, a flowable film made of an insulating material with flowability; planarizing a top face of the flowable film by pressing the flowable film with a pressing member; forming a solidified film by annealing the flowable film at a first temperature with the pressing member pressed against the flowable film; and forming a burned film with a flat top face by burning the solidified film through annealing of the solidified film at a second temperature higher than the first temperature.

    摘要翻译: 一种形成半导体器件的方法包括以下步骤:在衬底上形成具有流动性的由绝缘材料制成的可流动膜; 通过用按压部件压制可流动膜来平坦化可流动膜的顶面; 通过使按压部件压靠在可流动膜上,在第一温度下使可流动膜退火而形成固化膜; 以及通过在比所述第一温度高的第二温度下通过使所述固化膜退火来燃烧所述固化膜来形成具有平坦顶面的燃烧膜。

    Pattern formation method and method for forming semiconductor device
    5.
    发明申请
    Pattern formation method and method for forming semiconductor device 有权
    用于形成半导体器件的图案形成方法和方法

    公开(公告)号:US20050170269A1

    公开(公告)日:2005-08-04

    申请号:US11098371

    申请日:2005-04-05

    摘要: A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.

    摘要翻译: 图案形成方法包括形成由具有流动性的材料制成的可流动膜的步骤; 通过将所述按压构件压靠在所述可流动膜上,将设置在所述挤压构件的按压面上的凹部和凸部中的至少一个形成在所述可流动膜上; 通过使按压部件压靠在所述可流动膜上的第一温度退火,使其中已经转移了所述至少一个凹部和凸部的所述可流动膜固化而形成固化膜; 以及在高于第一温度的第二温度下通过退火而形成由固化膜制成的图案。

    Pattern formation method and method for forming semiconductor device
    6.
    发明授权
    Pattern formation method and method for forming semiconductor device 失效
    用于形成半导体器件的图案形成方法和方法

    公开(公告)号:US07563709B2

    公开(公告)日:2009-07-21

    申请号:US11907018

    申请日:2007-10-09

    IPC分类号: H01L21/4763

    摘要: A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.

    摘要翻译: 图案形成方法包括形成由具有流动性的材料制成的可流动膜的步骤; 通过将所述按压构件压靠在所述可流动膜上,将设置在所述挤压构件的按压面上的凹部和凸部中的至少一个形成在所述可流动膜上; 通过使按压部件压靠在所述可流动膜上的第一温度退火,使其中已经转移了所述至少一个凹部和凸部的所述可流动膜固化而形成固化膜; 以及在高于第一温度的第二温度下通过退火而形成由固化膜制成的图案。

    Method for forming semiconductor device
    7.
    发明申请
    Method for forming semiconductor device 有权
    半导体器件形成方法

    公开(公告)号:US20050164494A1

    公开(公告)日:2005-07-28

    申请号:US11090885

    申请日:2005-03-28

    摘要: A method for forming a semiconductor device includes the steps of forming a flowable film made of an insulating material with flowability; forming a first concave portion in the flowable film through transfer of a convex portion of a pressing face of a pressing member by pressing the pressing member against the flowable film; forming a solidified film having the first concave portion by solidifying the flowable film through annealing at a first temperature with the pressing member pressed against the flowable film; forming a burnt film having the first concave portion by burning the solidified film through annealing at a second temperature higher than the first temperature; forming a second concave portion connected at least to the first concave portion in the burnt film by forming, on the burnt film, a mask having an opening for forming the second concave portion and etching the burnt film by using the mask; and forming a plug and a metal interconnect by filing the first concave portion and the second concave portion of the burnt film with a conductive film.

    摘要翻译: 一种形成半导体器件的方法包括以下步骤:形成由具有流动性的绝缘材料制成的可流动膜; 通过将所述按压部件压靠在所述可流动膜上,通过使按压部件的按压面的凸部转移而在所述可流动膜中形成第一凹部; 通过使所述挤压构件压靠在所述可流动膜上,在第一温度下使所述可流动膜固化,形成具有所述第一凹部的固化膜; 通过在比所述第一温度高的第二温度退火来烧结所述固化膜,形成具有所述第一凹部的燃烧膜; 通过在所述燃烧膜上形成具有用于形成所述第二凹部的开口的掩模,并且通过使用所述掩模来蚀刻所述燃烧膜,形成至少与所述燃烧膜中的所述第一凹部连接的第二凹部; 以及通过用导电膜填充所述燃烧膜的所述第一凹部和所述第二凹部来形成插塞和金属互连。

    Concave pattern formation method and method for forming semiconductor device
    8.
    发明授权
    Concave pattern formation method and method for forming semiconductor device 有权
    凹形图案形成方法和半导体器件形成方法

    公开(公告)号:US07294571B2

    公开(公告)日:2007-11-13

    申请号:US11098371

    申请日:2005-04-05

    IPC分类号: H01L21/44

    摘要: A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.

    摘要翻译: 图案形成方法包括形成由具有流动性的材料制成的可流动膜的步骤; 通过将所述按压构件压靠在所述可流动膜上,将设置在所述挤压构件的按压面上的凹部和凸部中的至少一个形成在所述可流动膜上; 通过使按压部件压靠在所述可流动膜上的第一温度退火,使其中已经转移了所述至少一个凹部和凸部的所述可流动膜固化而形成固化膜; 以及在高于第一温度的第二温度下通过退火而形成由固化膜制成的图案。

    Pattern formation method and method for forming semiconductor device
    9.
    发明申请
    Pattern formation method and method for forming semiconductor device 失效
    用于形成半导体器件的图案形成方法和方法

    公开(公告)号:US20080045005A1

    公开(公告)日:2008-02-21

    申请号:US11907018

    申请日:2007-10-09

    IPC分类号: H01L21/31 H01L21/4763

    摘要: A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.

    摘要翻译: 图案形成方法包括形成由具有流动性的材料制成的可流动膜的步骤; 通过将所述按压构件压靠在所述可流动膜上,将设置在所述挤压构件的按压面上的凹部和凸部中的至少一个形成在所述可流动膜上; 通过使按压部件压靠在所述可流动膜上的第一温度退火,使其中已经转移了所述至少一个凹部和凸部的所述可流动膜固化而形成固化膜; 以及在高于第一温度的第二温度下通过退火而形成由固化膜制成的图案。

    In-plane-switching liquid crystal display unit
    10.
    发明授权
    In-plane-switching liquid crystal display unit 有权
    平面切换液晶显示单元

    公开(公告)号:US07495734B2

    公开(公告)日:2009-02-24

    申请号:US11128237

    申请日:2005-05-13

    IPC分类号: G02F1/1343 G02F1/1337

    摘要: An in-plane-switching liquid crystal display unit has a two-dimensional matrix of pixel regions each including a first auxiliary region and a second auxiliary region. When no electric field is applied, liquid crystal molecules in the first and second auxiliary regions are directed in respective orientations that lie at 90° with respect to each other. When a voltage is applied, the liquid crystal molecules are rotated in the same direction while maintaining their orientations in the first and second auxiliary regions at 90° with respect to each other. Alternatively, the liquid crystal molecules in the first and second auxiliary regions are directed in the same orientation when no electric field is applied, and when a voltage is applied, the liquid crystal molecules are rotated 15 opposite directions while maintaining their orientations in symmetric relationship.

    摘要翻译: 平面切换液晶显示单元具有各自包括第一辅助区域和第二辅助区域的像素区域的二维矩阵。 当没有施加电场时,第一和第二辅助区域中的液晶分子相对于彼此成90°的各自的取向。 当施加电压时,液晶分子沿相同的方向旋转,同时保持它们在第一和第二辅助区域中的取向相对于彼此成90°。 或者,当不施加电场时,第一和第二辅助区域中的液晶分子以相同的取向指向,并且当施加电压时,液晶分子沿着相反方向旋转15个方向,同时保持其对称关系的取向。