发明申请
- 专利标题: Gallium Nitride Single Crystal Growing Method and Gallium Nitride Single Crystal
- 专利标题(中): 氮化镓单晶生长法和氮化镓单晶
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申请号: US10594846申请日: 2005-03-30
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公开(公告)号: US20070209575A1公开(公告)日: 2007-09-13
- 发明人: Makoto Iwai , Katsuhiro Imai , Minoru Imaeda
- 申请人: Makoto Iwai , Katsuhiro Imai , Minoru Imaeda
- 申请人地址: JP Nagoya-city 467-8530
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP Nagoya-city 467-8530
- 优先权: JP2004-103093 20040331
- 国际申请: PCT/JP05/06692 WO 20050330
- 主分类号: C30B9/00
- IPC分类号: C30B9/00 ; C30B17/00
摘要:
It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.