公开(公告)号：US08241422B2

公开(公告)日：2012-08-14

申请号：US10594846

申请日：2005-03-30

申请人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

发明人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

IPC分类号： C30B25/12

CPC分类号： C30B9/10 ,  C30B29/406

摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.

摘要翻译： 提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。 使用至少含有金属钠的焊剂8生长氮化镓单晶。 氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。 优选地，大气中的氮分压为100atms以上且2000atms以下。 优选地，生长温度为1000℃以上且1500℃以下。

公开(公告)号：US20070209575A1

公开(公告)日：2007-09-13

申请号：US10594846

申请日：2005-03-30

申请人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

发明人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

IPC分类号： C30B9/00 ,  C30B17/00

CPC分类号： C30B9/10 ,  C30B29/406

摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.

摘要翻译： 提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。 使用至少含有金属钠的焊剂8生长氮化镓单晶。 氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。 优选地，大气中的氮分压为100atms以上且2000atms以下。 优选地，生长温度为1000℃以上且1500℃以下。

公开(公告)号：US20060120415A1

公开(公告)日：2006-06-08

申请号：US11329019

申请日：2006-01-10

申请人： Makoto Iwai ,  Katsuhiro Imai ,  Takashi Yoshino ,  Minoru Imaeda

发明人： Makoto Iwai ,  Katsuhiro Imai ,  Takashi Yoshino ,  Minoru Imaeda

IPC分类号： H01S3/10

CPC分类号： G02F1/377 ,  G02F2202/20

摘要： It is provided system and method of oscillating blue laser beam having a relatively high conversion efficiency and whose output power of the blue laser beam can be improved. Light emitted from a broad area semiconductor laser device 2 of Fabry-Perot type is irradiated into a slab optical waveguide 8 made of a non-linear optical crystal as a fundamental wave “A”. Blue laser beam “B” is emitted from the slab optical waveguide 8.

摘要翻译： 提供了具有相对高的转换效率的蓝色激光束的振荡系统和方法，并且可以提高蓝色激光束的输出功率。 从法布里 - 珀罗型的广域半导体激光装置2发射的光被照射到由非线性光学晶体制成的平板光波导8中作为基波“A”。 蓝色激光束“B”从平板光波导8发射。

公开(公告)号：US06527851B2

公开(公告)日：2003-03-04

申请号：US09798750

申请日：2001-03-02

申请人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

IPC分类号： C30B1508

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.

摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。纤维晶种15与熔体18接触，然后通过降低晶种从坩埚7的开口13c向下拉。 在晶种之后产生肩部14A，并且在肩部之后制造平面体14B。 在这种情况下，将晶种的每个晶轴与肩部的每个相应的晶轴之间的晶格常数的差分别控制在1％以下。

公开(公告)号：US06204957B1

公开(公告)日：2001-03-20

申请号：US09307525

申请日：1999-05-07

申请人： Takashi Yoshino ,  Katsuhiro Imai ,  Minoru Imaeda ,  Kiyofumi Chikuma ,  Atsushi Onoe ,  Ayako Yoshida

发明人： Takashi Yoshino ,  Katsuhiro Imai ,  Minoru Imaeda ,  Kiyofumi Chikuma ,  Atsushi Onoe ,  Ayako Yoshida

IPC分类号： G02F137

CPC分类号： G02F1/377 ,  G02F2001/3546 ,  G02F2201/307

摘要： A second harmonic wave-generating element for generating a second harmonic wave from a fundamental wave, having an optical waveguide layer made of first epitaxial material having a fundamental composition of K3Li2−x(Nb1−YTaY)5+XO15+Z, an underclad part made of second epitaxial material having a fundamental composition of K3Li2−X+A(Nb1−Y−BTaY+B)5+X−AO15+Z, an overclad part made of third epitaxial material having a fundamental composition of K3Li2−X+C(Nb1−Y−DTaY+D)5+X−CO15+Z and formed on and contacting the optical waveguide layer, wherein X=0.006 to 0.5, Y=0.00 to 0.05, A=0.006 to 0.12, B=0.005 to 0.5, C=0.006 to 0.12, D=0.005 to 0.5, X−A≦0, X−C≧0, |A−C|≦0.006, and |B−D|≦0.005).

摘要翻译： 一种用于从基波产生二次谐波的二次谐波发生元件，具有由具有K3Li2-x（Nb1-YTaY）5 + XO15 + Z的基本组成的第一外延材料制成的光波导层，下部部分 由具有K3Li2-X + A（Nb1-Y-BTaY + B）5 + X-AO15 + Z的基本组成的第二外延材料制成，由具有K 3 Li 2 -X + C的基本组成的第三外延材料制成的外包层 （Nb1-Y-DTaY + D）5 + X-CO15 + Z，形成在光波导层上并与光波导层接触，其中X = 0.006〜0.5，Y = 0.00〜0.05，A = 0.006〜0.12，B = 0.005〜0.5 ，C = 0.006〜0.12，D = 0.005〜0.5，XA <= 0，XC> = 0，| AC |≤0.006，| BD |≤0.005）。

公开(公告)号：US06565654B2

公开(公告)日：2003-05-20

申请号：US09897797

申请日：2001-07-02

申请人： Toshihisa Yokoyama ,  Masahiro Murasato ,  Katsuhiro Imai ,  Minoru Imaeda

发明人： Toshihisa Yokoyama ,  Masahiro Murasato ,  Katsuhiro Imai ,  Minoru Imaeda

IPC分类号： C30B2102

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10T117/10

摘要： In a process for producing a planar body of an oxide single crystal with a &mgr; pulling-down method, a shoulder portion having a larger width is grown without any polycrystal regions, cracks or crystal deteriorations in a central portion of the planar body. A raw material of the oxide single crystal is melted in a crucible. A seed crystal is contacted to a melt of the raw material near an opening of a nozzle 13 of the crucible. Then, the melt 18 is drawn from the opening by pulling down the seed crystal to form a planar body 14A. A temperature distribution of the nozzle 13 in a direction perpendicular to the drawing direction B is controlled by supplying heat to the nozzle 13 and/or by removing heat from the nozzle 13.

公开(公告)号：US5961720A

公开(公告)日：1999-10-05

申请号：US909138

申请日：1997-08-11

申请人： Minoru Imaeda ,  Akihiko Honda ,  Katsuhiro Imai ,  Yuichiro Imanishi ,  Nobuyuki Kokune ,  Shoji Sogo ,  Kazuaki Yamaguchi ,  Tetsuo Taniuchi

发明人： Minoru Imaeda ,  Akihiko Honda ,  Katsuhiro Imai ,  Yuichiro Imanishi ,  Nobuyuki Kokune ,  Shoji Sogo ,  Kazuaki Yamaguchi ,  Tetsuo Taniuchi

IPC分类号： C30B15/00 ,  C30B15/08 ,  C30B35/00

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1032 ,  Y10T117/1056 ,  Y10T117/1064

摘要： A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.

摘要翻译： 公开了一种通过向下拉下单晶原料的熔体来连续生产单晶的方法，其中从熔体生长的单晶体被连续地向下拉，并且通过间歇切割连续形成多个单晶产物 单晶体向下移动。

公开(公告)号：US5737117A

公开(公告)日：1998-04-07

申请号：US628252

申请日：1996-04-05

申请人： Minoru Imaeda ,  Katsuhiro Imai ,  Tatsuo Kawaguchi ,  Takashi Yoshino ,  Akihiko Honda

发明人： Minoru Imaeda ,  Katsuhiro Imai ,  Tatsuo Kawaguchi ,  Takashi Yoshino ,  Akihiko Honda

IPC分类号： G02F1/35 ,  C30B15/00 ,  C30B15/08 ,  G02B6/13 ,  G02F1/355 ,  G02F1/37 ,  G02F1/377

CPC分类号： G02F1/377 ,  C30B15/00 ,  C30B15/08 ,  C30B29/30 ,  G02B6/131

摘要： A second harmonic generation element including a single crystal substrate having a fundamental composition of K.sub.3 Li.sub.2-2x (Nb.sub.1-y Ta.sub.y).sub.5+5z O.sub.15-x+12.5z and an optical waveguide made of an epitaxial film with a fundamental composition of K.sub.3 Li.sub.2-2a (Nb.sub.1-b Ta.sub.b).sub.5+5c O.sub.15-a+12.5c and refractive index different from that of the single crystal substrate, wherein: -0.5.ltoreq.a, x.ltoreq.0.625 0.ltoreq.b, y.ltoreq.0.5 0.8.ltoreq.(5-2x)/(5+5z), (5-2a)/(5+5c).ltoreq.1.2.

摘要翻译： 包括具有K3Li2-2x（Nb1-yTay）5 + 5z015-x + 12.5z的基本组成的单晶衬底的二次谐波发生元件和由基本组成为K3Li2-2a（Nb1）的外延膜制成的光波导 -bTab）5 + 5cO15-a + 12.5c和与单晶衬底的折射率不同的折射率，其中：-0.5≤a，x <0.6250

公开(公告)号：US06451110B2

公开(公告)日：2002-09-17

申请号：US09799309

申请日：2001-03-05

申请人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

IPC分类号： C30B710

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A planar seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A planar body 14 is produced following the seed crystal 15. In this case, differences in lattice constants between each crystal axis of the seed crystal 15 and each corresponding crystal axis of the planar body 14 is controlled at 0.1% or less, respectively.

摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。平面晶种15与熔体18接触，然后通过降低晶种从熔炉18的开口13c向下拉。 在籽晶15之后制造平面体14.在这种情况下，晶种15的每个晶轴与平面体14的每个相应的晶轴之间的晶格常数的差分别控制在0.1％以下。

公开(公告)号：US06447603B2

公开(公告)日：2002-09-10

申请号：US09793193

申请日：2001-02-26

申请人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

IPC分类号： C30B1302

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016

摘要： A process is disclosed for producing an oxide single crystal, including the steps of: melting a raw material for a single crystal of an oxide inside a crucible, contacting a seed crystal with the resulting melt, growing the oxide single crystal by pulling-down the melt through an opening of the crucible in a given pulling-down axis, and fixedly holding the seed crystal and then reducing an angle of a given crystalline orientation of the seed crystal selected for growing the single crystal to the pulling-down axis.

摘要翻译： 公开了一种用于生产氧化物单晶的方法，包括以下步骤：在坩埚内熔化氧化物单晶的原料，使晶种与所得熔体接触，通过拉下氧化物单晶来生长氧化物单晶 在给定的下拉轴中熔化通过坩埚的开口，并固定地保持晶种，然后将用于将单晶生长选择的晶种的给定晶体取向的角度减小到下拉轴。