Invention Application
US20070210421A1 Semiconductor device fabricated using a carbon-containing film as a contact etch stop layer
审中-公开
使用含碳膜作为接触蚀刻停止层制造的半导体器件
- Patent Title: Semiconductor device fabricated using a carbon-containing film as a contact etch stop layer
- Patent Title (中): 使用含碳膜作为接触蚀刻停止层制造的半导体器件
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Application No.: US11374635Application Date: 2006-03-13
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Publication No.: US20070210421A1Publication Date: 2007-09-13
- Inventor: Haowen Bu , Anand Krishnan , Ting Tsui , William Dostalik , Rajesh Khamankar
- Applicant: Haowen Bu , Anand Krishnan , Ting Tsui , William Dostalik , Rajesh Khamankar
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Inc.
- Current Assignee: Texas Instruments Inc.
- Current Assignee Address: US TX Dallas
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/469
Abstract:
The invention provides, one aspect, a method of fabricating a semiconductor device. In one aspect, the method includes forming a carbide layer over a gate electrode and depositing a pre-metal dielectric layer over the carbide layer. The method provides a significant reduction in NBTI drift.
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