发明申请
US20070212486A1 Plasma Enhanced Chemical Vapor Deposition of Metal Oxide 审中-公开
等离子体增强化学气相沉积金属氧化物

  • 专利标题: Plasma Enhanced Chemical Vapor Deposition of Metal Oxide
  • 专利标题(中): 等离子体增强化学气相沉积金属氧化物
  • 申请号: US11547461
    申请日: 2005-05-20
  • 公开(公告)号: US20070212486A1
    公开(公告)日: 2007-09-13
  • 发明人: Dmitry DinegaChristopher Weikart
  • 申请人: Dmitry DinegaChristopher Weikart
  • 国际申请: PCT/US05/17747 WO 20050520
  • 主分类号: C23C16/40
  • IPC分类号: C23C16/40
Plasma Enhanced Chemical Vapor Deposition of Metal Oxide
摘要:
A metal oxide coating can be applied to a substrate at a relatively low temperature and at or near atmospheric pressure by carrying a metal oxide precursor and an oxidizing agent through a corona discharge or a dielectric barrier discharge to form the metal oxide and deposit it onto to the substrate.
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