发明申请
US20070215967A1 System and method for reducing critical current of magnetic random access memory
审中-公开
减小磁性随机存取存储器临界电流的系统和方法
- 专利标题： System and method for reducing critical current of magnetic random access memory
- 专利标题（中）： 减小磁性随机存取存储器临界电流的系统和方法
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申请号： US11645550申请日： 2006-12-27
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公开(公告)号： US20070215967A1公开(公告)日： 2007-09-20
- 发明人: Te-Ho Wu , Alberto Canizo Cabrera , Lin-Xiu Ye
- 申请人： Te-Ho Wu , Alberto Canizo Cabrera , Lin-Xiu Ye
- 优先权： TW95109490 20060320
- 主分类号： H01L43/00
- IPC分类号： H01L43/00
摘要：
A system and a method for reducing critical current of magnetic random access memory (MRAM) are disclosed. The magnetic device includes at least a pinned layer, a spacer layer and a free layer, and the material of the pinned layer and the free layer is perpendicularly anisotropic ferrimagnetic. The spacer layer is an insulator. By the modified Landau-Lifshitz-Gilbert equations, the varying trend of the critical current can be estimated.