发明申请
US20070218655A1 Method for enhancing growth of semipolar (A1,In,Ga,B)N via metalorganic chemical vapor deposition
有权
通过金属有机化学气相沉积来增强半极性（Al，In，Ga，B）N生长的方法
- 专利标题： Method for enhancing growth of semipolar (A1,In,Ga,B)N via metalorganic chemical vapor deposition
- 专利标题（中）： 通过金属有机化学气相沉积来增强半极性（Al，In，Ga，B）N生长的方法
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申请号： US11655572申请日： 2007-01-19
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公开(公告)号： US20070218655A1公开(公告)日： 2007-09-20
- 发明人: Hitoshi Sato , John Kaeding , Michael Iza , Troy Baker , Benjamin Haskell , Steven DenBaars , Shuji Nakamura
- 申请人： Hitoshi Sato , John Kaeding , Michael Iza , Troy Baker , Benjamin Haskell , Steven DenBaars , Shuji Nakamura
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
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