Invention Application
- Patent Title: Method for forming metal bumps
- Patent Title (中): 金属凸块的形成方法
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Application No.: US11635498Application Date: 2006-12-08
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Publication No.: US20070218676A1Publication Date: 2007-09-20
- Inventor: Sheng-Ming Wang , Shuo-Hsun Chang , Kuo-Hua Chang , Chi-Chih Huang , Chih-Cheng Chen
- Applicant: Sheng-Ming Wang , Shuo-Hsun Chang , Kuo-Hua Chang , Chi-Chih Huang , Chih-Cheng Chen
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING INC.
- Current Assignee Address: TW Kaohsiung
- Priority: TW95109338 20060317
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method for forming metal bumps is disclosed. Steps of the method include supplying a substrate containing a plurality of pads; forming a first photoresist layer on the substrate, herein the first photoresist layer covers the pads; performing a planarization step to remove a portion of the first photoresist layer so as to expose the pads; forming a conductive layer on the first photoresist layer and the pads; electroplating a metal layer on the conductive layer; forming a patterned second photoresist layer on the metal layer; a portion of the metal layer and the conductive layer which are not covered by the patterned second photoresist layer is removed by using the patterned second photoresist layer as a mask; removing the patterned second photoresist layer; and forming a solder mask on the substrate, wherein the solder mask has a plurality of openings to expose the metal layer located on the pads.
Public/Granted literature
- US07550375B2 Method for forming metal bumps Public/Granted day:2009-06-23
Information query
IPC分类: