公开(公告)号：US20070163269A1

公开(公告)日：2007-07-19

申请号：US11564854

申请日：2006-11-30

Applicant: Chao-Tsai Chung ,  Kuo-Hua Chang

Inventor： Chao-Tsai Chung ,  Kuo-Hua Chang

IPC: F25B21/02

CPC classification number: F25B21/02 ,  F25B2321/023 ,  F28D15/0233 ,  F28D15/0266 ,  F28F3/02 ,  H01L23/38 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A heat dissipation module suitable for performing heat dissipation on a heat source is provided. The heat dissipation module includes a first base, a first radiator, a thermoelectric cooler and a second radiator. The first base has a first surface and a second surface, wherein the first surface contacts the heat source. Both the first radiator and the thermoelectric cooler contact the second surface, while the second radiator is disposed on the thermoelectric cooler.

Abstract translation: 提供了适用于在热源上进行散热的散热模块。 散热模块包括第一基座，第一辐射器，热电冷却器和第二辐射器。 第一基座具有第一表面和第二表面，其中第一表面接触热源。 第一散热器和热电冷却器都接触第二表面，而第二散热器设置在热电冷却器上。

公开(公告)号：US20060261620A1

公开(公告)日：2006-11-23

申请号：US11417785

申请日：2006-05-03

Applicant: Lung-Chi Lu ,  Kuo-Hua Chang

Inventor： Lung-Chi Lu ,  Kuo-Hua Chang

IPC: B60J9/00

CPC classification number: G11B33/08 ,  G06F1/187

Abstract: Anti-shock mechanisms for electronic devices are provided. An anti-shock mechanism includes a plurality of first rods and first buffers. The first rods perpendicularly project from a first side of the electronic device, wherein the first side is substantially parallel to a moving direction of the vehicle. Each of the first buffers comprises a first opening, and the first rods are inserted in the first openings respectively.

Abstract translation: 提供了电子设备的抗冲击机制。 抗冲击机构包括多个第一杆和第一缓冲器。 第一杆从电子设备的第一侧垂直地突出，其中第一侧基本上平行于车辆的移动方向。 每个第一缓冲器包括第一开口，并且第一杆分别插入第一开口中。

公开(公告)号：US20070232051A1

公开(公告)日：2007-10-04

申请号：US11589714

申请日：2006-10-31

Applicant: Sheng-Ming Wang ,  Shuo-Hsun Chang ,  Kuo-Hua Chang ,  Chi-Chih Huang ,  Chih-Cheng Chen

Inventor： Sheng-Ming Wang ,  Shuo-Hsun Chang ,  Kuo-Hua Chang ,  Chi-Chih Huang ,  Chih-Cheng Chen

IPC: H01L21/44

CPC classification number: H05K3/3473 ,  H01L21/4853 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11502 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H05K3/243 ,  H05K3/3452 ,  H05K2203/043 ,  H05K2203/054 ,  H05K2203/0588

Abstract: A method for forming metal bumps is disclosed, comprising: providing a substrate including a plurality of pads; forming a solder mask on the substrate, wherein the solder mask has first openings to expose the pads; forming a photoresist layer on the solder mask, wherein the photoresist layer has second openings to expose the pads; forming a conductive layer on the phototresist layer, wherein a sidewall of each second opening, a sidewall of each first opening and the pads are covered with the conductive layer; forming a metal layer on the conductive layer by electroplating to fill the first and second openings; performing a planarization step to remove the conductive layer and the metal layer on the photoresist layer so as to remain the conductive layer and the metal layer in the first and second openings; removing the photoresist layer and performing a reflow step to form metal bumps.

Abstract translation: 公开了一种用于形成金属凸块的方法，包括：提供包括多个焊盘的基板; 在所述基板上形成焊接掩模，其中所述焊接掩模具有第一开口以暴露所述焊盘; 在所述焊接掩模上形成光致抗蚀剂层，其中所述光致抗蚀剂层具有第二开口以暴露所述焊盘; 在光致抗蚀剂层上形成导电层，其中每个第二开口的侧壁，每个第一开口的侧壁和焊盘被导电层覆盖; 通过电镀在所述导电层上形成金属层以填充所述第一和第二开口; 执行平坦化步骤以去除光致抗蚀剂层上的导电层和金属层，以便在第一和第二开口中保持导电层和金属层; 去除光致抗蚀剂层并进行回流步骤以形成金属凸块。

公开(公告)号：US07228408B2

公开(公告)日：2007-06-05

申请号：US10796476

申请日：2004-03-09

Applicant: Chien-Hao Wu ,  Kuo-Hua Chang ,  Ming-Chih Ko ,  Shih-Chieh Kuo

Inventor： Chien-Hao Wu ,  Kuo-Hua Chang ,  Ming-Chih Ko ,  Shih-Chieh Kuo

IPC: G06F9/24 ,  G06F1/24 ,  G06F13/00

CPC classification number: G06F9/441

Abstract: A multi-mode operation system and method for computer systems is proposed. The system includes a storage device having first and second disk partitions, a mode controller and a master boot program. The master boot program checks the status of the mode controller. If the computer system is running in PC mode, the master boot program hides the second disk partition, boots from the first disk partition, and loads a complete version of an operating system therein, thereby enables the computer system to run in the PC mode. If the computer system is running in a sub-mode being defined as an entry of a multimedia mode class, such as a music playing mode or video playing mode, the master boot program activates the second disk partition, boots therefrom, and loads a refined version of the operating system therein, thereby enables the computer system to run in the selected sub-mode.

Abstract translation: 提出了一种用于计算机系统的多模式操作系统和方法。 该系统包括具有第一和第二磁盘分区的存储设备，模式控制器和主引导程序。 主引导程序检查模式控制器的状态。 如果计算机系统以PC模式运行，则主引导程序将隐藏第二个磁盘分区，从第一个磁盘分区引导，并在其中加载完整版本的操作系统，从而使计算机系统能够以PC模式运行。 如果计算机系统以被定义为诸如音乐播放模式或视频播放模式的多媒体模式类别的条目的子模式运行，则主引导程序激活第二磁盘分区，从其引导并加载精炼 版本的操作系统，从而使得计算机系统能够以所选择的子模式运行。

公开(公告)号：US06444521B1

公开(公告)日：2002-09-03

申请号：US09710421

申请日：2000-11-09

Applicant: Kent Kuo-Hua Chang ,  Cheng-Chen Calvin Hsueh

Inventor： Kent Kuo-Hua Chang ,  Cheng-Chen Calvin Hsueh

IPC: H01L218247

CPC classification number: H01L21/28194 ,  H01L21/28282 ,  H01L29/511 ,  H01L29/792

Abstract: A method to improve nitride floating gate charge trapping for NROM flash memory device is disclosed. The present invention uses the SiON to replace the SiN of the NROM floating gate of the prior art. This arrangement improves the endurance and the reliability of the device and also extends data retention times. The present invention also discloses the integrated processes to fabricate the NROM flash memory device. Using the processes, the steps of fabricating the NROM are efficiently reduced, and the defects caused by the cleaning steps are eliminated.

Abstract translation: 公开了一种改进NROM闪存器件的氮化物浮栅电荷俘获的方法。 本发明使用SiON替代现有技术的NROM浮动栅极的SiN。 这种布置提高了设备​​的耐久性和可靠性，并且还延长了数据保留时间。 本发明还公开了制造NROM闪速存储器件的集成过程。 通过这些处理，可以有效地减少制造NROM的步骤，消除由清洗步骤引起的缺陷。

公开(公告)号：US07550375B2

公开(公告)日：2009-06-23

申请号：US11635498

申请日：2006-12-08

Applicant: Sheng-Ming Wang ,  Shuo-Hsun Chang ,  Kuo-Hua Chang ,  Chi-Chih Huang ,  Chih-Cheng Chen

Inventor： Sheng-Ming Wang ,  Shuo-Hsun Chang ,  Kuo-Hua Chang ,  Chi-Chih Huang ,  Chih-Cheng Chen

IPC: H01L21/44

CPC classification number: H05K3/4007 ,  H01L21/4853 ,  H01L24/11 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/11902 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/13613 ,  H01L2224/13616 ,  H01L2224/13618 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/1366 ,  H01L2224/13664 ,  H01L2924/00013 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H05K3/064 ,  H05K3/28 ,  H05K2201/0367 ,  H05K2201/09881 ,  H05K2203/054 ,  H05K2203/0542 ,  H05K2203/0574 ,  H01L2924/00014 ,  H01L2224/13099

Abstract: A method for forming metal bumps is disclosed. Steps of the method include supplying a substrate containing a plurality of pads; forming a first photoresist layer on the substrate, herein the first photoresist layer covers the pads; performing a planarization step to remove a portion of the first photoresist layer so as to expose the pads; forming a conductive layer on the first photoresist layer and the pads; electroplating a metal layer on the conductive layer; forming a patterned second photoresist layer on the metal layer; a portion of the metal layer and the conductive layer which are not covered by the patterned second photoresist layer is removed by using the patterned second photoresist layer as a mask; removing the patterned second photoresist layer; and forming a solder mask on the substrate, wherein the solder mask has a plurality of openings to expose the metal layer located on the pads.

Abstract translation: 公开了一种用于形成金属凸块的方法。 该方法的步骤包括提供含有多个焊盘的衬底; 在衬底上形成第一光致抗蚀剂层，这里第一光致抗蚀剂层覆盖衬垫; 执行平面化步骤以去除第一光致抗蚀剂层的一部分以暴露焊盘; 在所述第一光致抗蚀剂层和所述焊盘上形成导电层; 在导电层上电镀金属层; 在所述金属层上形成图案化的第二光致抗蚀剂层; 通过使用图案化的第二光致抗蚀剂层作为掩模去除未被图案化的第二光致抗蚀剂层覆盖的金属层和导电层的一部分; 去除图案化的第二光致抗蚀剂层; 以及在所述衬底上形成焊料掩模，其中所述焊接掩模具有多个开口以暴露位于焊盘上的金属层。

公开(公告)号：US20070218676A1

公开(公告)日：2007-09-20

申请号：US11635498

申请日：2006-12-08

Applicant: Sheng-Ming Wang ,  Shuo-Hsun Chang ,  Kuo-Hua Chang ,  Chi-Chih Huang ,  Chih-Cheng Chen

Inventor： Sheng-Ming Wang ,  Shuo-Hsun Chang ,  Kuo-Hua Chang ,  Chi-Chih Huang ,  Chih-Cheng Chen

IPC: H01L21/44

CPC classification number: H05K3/4007 ,  H01L21/4853 ,  H01L24/11 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/11902 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/13613 ,  H01L2224/13616 ,  H01L2224/13618 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/1366 ,  H01L2224/13664 ,  H01L2924/00013 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H05K3/064 ,  H05K3/28 ,  H05K2201/0367 ,  H05K2201/09881 ,  H05K2203/054 ,  H05K2203/0542 ,  H05K2203/0574 ,  H01L2924/00014 ,  H01L2224/13099

Abstract: A method for forming metal bumps is disclosed. Steps of the method include supplying a substrate containing a plurality of pads; forming a first photoresist layer on the substrate, herein the first photoresist layer covers the pads; performing a planarization step to remove a portion of the first photoresist layer so as to expose the pads; forming a conductive layer on the first photoresist layer and the pads; electroplating a metal layer on the conductive layer; forming a patterned second photoresist layer on the metal layer; a portion of the metal layer and the conductive layer which are not covered by the patterned second photoresist layer is removed by using the patterned second photoresist layer as a mask; removing the patterned second photoresist layer; and forming a solder mask on the substrate, wherein the solder mask has a plurality of openings to expose the metal layer located on the pads.

Abstract translation: 公开了一种用于形成金属凸块的方法。 该方法的步骤包括提供含有多个焊盘的衬底; 在衬底上形成第一光致抗蚀剂层，这里第一光致抗蚀剂层覆盖衬垫; 执行平面化步骤以去除第一光致抗蚀剂层的一部分以暴露焊盘; 在所述第一光致抗蚀剂层和所述焊盘上形成导电层; 在导电层上电镀金属层; 在所述金属层上形成图案化的第二光致抗蚀剂层; 通过使用图案化的第二光致抗蚀剂层作为掩模去除未被图案化的第二光致抗蚀剂层覆盖的金属层和导电层的一部分; 去除图案化的第二光致抗蚀剂层; 以及在所述衬底上形成焊料掩模，其中所述焊接掩模具有多个开口以暴露位于焊盘上的金属层。