发明申请
US20070229806A1 Measuring a damaged structure formed on a wafer using optical metrology
有权
使用光学测量法测量在晶片上形成的损坏结构
- 专利标题： Measuring a damaged structure formed on a wafer using optical metrology
- 专利标题（中）： 使用光学测量法测量在晶片上形成的损坏结构
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申请号： US11396210申请日： 2006-03-30
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公开(公告)号： US20070229806A1公开(公告)日： 2007-10-04
- 发明人: Kevin Lally , Merritt Funk , Radha Sundararajan
- 申请人： Kevin Lally , Merritt Funk , Radha Sundararajan
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron, Ltd.
- 当前专利权人： Tokyo Electron, Ltd.
- 当前专利权人地址： JP Tokyo
- 主分类号： G01N21/00
- IPC分类号： G01N21/00
摘要：
A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.
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