公开(公告)号：US07324193B2

公开(公告)日：2008-01-29

申请号：US11396214

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： G06F15/18 ,  G06N3/08

CPC分类号： G01N21/95607 ,  G01N21/4788 ,  G01N21/9501 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.

摘要翻译： 一种使用光学测量法测量在半导体晶片上形成的损坏结构的方法，该方法包括从损坏的周期性结构获得测量的衍射信号。 定义损坏的周期结构的假设剖面。 具有未损坏部分的假想轮廓，其对应于损坏的周期性结构中的第一材料的未损坏区域，以及损坏部分，其对应于损坏的周期性结构中的第一材料的损坏区域。 未损伤部分和损坏部分具有与它们相关联的不同性质。 使用假设曲线计算假设损坏的周期性结构的模拟衍射信号。 将测得的衍射信号与模拟衍射信号进行比较。 如果测量的衍射信号和模拟衍射信号在匹配标准内匹配，则基于用于计算模拟衍射信号的假想轮廓的损坏部分建立损坏的周期性结构的损伤量。

公开(公告)号：US20070232045A1

公开(公告)日：2007-10-04

申请号：US11394592

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： H01L21/44

CPC分类号： H01L21/76811 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76813 ,  H01L22/12

摘要： A method of assessing damage of a dual damascene structure includes obtaining a wafer after the wafer has been processed using a dual damascene process. A first damage-assessment procedure is performed on the wafer using an optical metrology process to gather damage-assessment data for a first set of measurements sites on the wafer. For each measurement site in the first set of measurement sites, the optical metrology process determines an amount of damage of a damaged area of a periodic grating in the measurement site. The damage-assessment data includes the amount of damage determined by the optical metrology process. A first damage-assessment map is created for the dual damascene process. The first damage-assessment includes the damage-assessment data and the locations of the first set of measurement sites on the wafer. One or more values in the damage-assessment map are compared to damage-assessment limits established for the dual damascene process to identify the wafer as a damaged or undamaged wafer.

摘要翻译： 评估双镶嵌结构的损伤的方法包括在使用双镶嵌工艺处理晶片之后获得晶片。 使用光学测量过程在晶片上执行第一损伤评估程序以收集晶片上的第一组测量位置的损伤评估数据。 对于第一组测量点中的每个测量位置，光学测量过程确定测量位置中周期性光栅的损坏区域的损伤量。 损伤评估数据包括由光学计量过程确定的损伤量。 为双镶嵌工艺创建了第一个损伤评估图。 第一次损伤评估包括损伤评估数据和晶片上第一组测量位置的位置。 将损伤评估图中的一个或多个值与为双镶嵌工艺建立的损伤评估限制进行比较，以将晶片识别为损坏或未损坏的晶片。

公开(公告)号：US07623978B2

公开(公告)日：2009-11-24

申请号：US11394592

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： G01N37/00 ,  G01R31/26

CPC分类号： H01L21/76811 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76813 ,  H01L22/12

摘要： A method of assessing damage of a dual damascene structure includes obtaining a wafer after the wafer has been processed using a dual damascene process. A first damage-assessment procedure is performed on the wafer using an optical metrology process to gather damage-assessment data for a first set of measurements sites on the wafer. For each measurement site in the first set of measurement sites, the optical metrology process determines an amount of damage of a damaged area of a periodic grating in the measurement site. The damage-assessment data includes the amount of damage determined by the optical metrology process. A first damage-assessment map is created for the dual damascene process. The first damage-assessment includes the damage-assessment data and the locations of the first set of measurement sites on the wafer. One or more values in the damage-assessment map are compared to damage-assessment limits established for the dual damascene process to identify the wafer as a damaged or undamaged wafer.

摘要翻译： 评估双镶嵌结构的损伤的方法包括在使用双镶嵌工艺处理晶片之后获得晶片。 使用光学测量过程在晶片上执行第一损伤评估程序以收集晶片上的第一组测量位置的损伤评估数据。 对于第一组测量点中的每个测量位置，光学测量过程确定测量位置中周期性光栅的损坏区域的损坏量。 损伤评估数据包括由光学计量过程确定的损伤量。 为双镶嵌工艺创建了第一个损伤评估图。 第一次损伤评估包括损伤评估数据和晶片上第一组测量位置的位置。 将损伤评估图中的一个或多个值与为双镶嵌工艺建立的损伤评估限制进行比较，以将晶片识别为损坏或未损坏的晶片。

公开(公告)号：US07619731B2

公开(公告)日：2009-11-17

申请号：US11396210

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： G01N21/00

CPC分类号： G01N21/9501 ,  G01N21/4788 ,  G01N21/95607 ,  H01L22/12

摘要： A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.

摘要翻译： 使用光学计量测量在半导体晶片上形成的损坏结构的方法包括将入射光束引导到损坏的结构上。 从损坏的结构接收衍射光束。 处理接收的衍射光束以确定受损结构的未损伤部分的轮廓并且测量损坏结构的电介质损伤的量。

公开(公告)号：US20070229806A1

公开(公告)日：2007-10-04

申请号：US11396210

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： G01N21/00

CPC分类号： G01N21/9501 ,  G01N21/4788 ,  G01N21/95607 ,  H01L22/12

摘要： A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.

摘要翻译： 使用光学计量测量在半导体晶片上形成的损坏结构的方法包括将入射光束引导到损坏的结构上。 从损坏的结构接收衍射光束。 处理接收的衍射光束以确定受损结构的未损伤部分的轮廓并且测量损坏结构的电介质损伤的量。

公开(公告)号：US20060184264A1

公开(公告)日：2006-08-17

申请号：US11058321

申请日：2005-02-16

申请人： James Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

发明人： James Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

IPC分类号： G06F19/00

CPC分类号： G05B19/4184 ,  G05B2219/31356 ,  G05B2219/32179 ,  G05B2219/45031 ,  Y02P80/40 ,  Y02P90/14 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/86

摘要： A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.

公开(公告)号：US07477960B2

公开(公告)日：2009-01-13

申请号：US11058321

申请日：2005-02-16

申请人： James E. Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

发明人： James E. Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

IPC分类号： G06F19/00

CPC分类号： G05B19/4184 ,  G05B2219/31356 ,  G05B2219/32179 ,  G05B2219/45031 ,  Y02P80/40 ,  Y02P90/14 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/86

摘要： A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.

摘要翻译： 一种用于在APC系统中实现FDC的方法，包括从存储器接收FDC模型; 将FDC模型提供给过程模型计算引擎; 使用过程模型计算引擎计算预测的依赖过程参数的向量; 接收包括一组配方参数的处理配方，向处理模块提供处理配方; 执行过程配方以产生测量的依赖过程参数的向量; 计算预测的依赖过程参数的向量与测量的依赖过程参数的向量之间的差; 将差值与阈值进行比较; 并且当差值大于阈值时声明故障状况。

公开(公告)号：US07576851B2

公开(公告)日：2009-08-18

申请号：US11395636

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： G01P3/36

CPC分类号： G01N21/95607

摘要： A method of creating a library for measuring a plurality of damaged structures formed on a semiconductor wafer using optical metrology includes directing an incident beam on a first damaged structure. The first damaged structure was formed by modifying at least one process parameter in a dual damascene procedure. A diffracted beam is received from the first damaged structure. A measured diffraction signal is obtained based on the received diffracted beam. A first simulated diffraction signal is calculated. The first simulated diffraction signal corresponds to a hypothetical profile of the first damaged structure. The hypothetical profile includes an undamaged dielectric portion and a damaged dielectric portion. The measured diffraction signal is compared to the first simulated diffraction signal. If the measured diffraction signal and the first simulated diffraction signal match within a matching criterion, then the first simulated diffraction signal, the hypothetical profile of the first damaged structure, and an amount of dielectric damage corresponding to the damaged dielectric portion of the hypothetical profile are stored in a library.

摘要翻译： 使用光学测量法创建用于测量形成在半导体晶片上的多个损坏结构的库的方法包括将入射光束引导到第一损坏结构上。 通过在双镶嵌程序中修改至少一个工艺参数来形成第一个损坏的结构。 从第一损坏结构接收衍射光束。 基于接收的衍射光束获得测量的衍射信号。 计算第一个模拟衍射信号。 第一模拟衍射信号对应于第一损坏结构的假想轮廓。 假想轮廓包括未损坏的电介质部分和损坏的电介质部分。 将测量的衍射信号与第一模拟衍射信号进行比较。 如果测量的衍射信号和第一模拟衍射信号在匹配标准内匹配，则第一模拟衍射信号，第一损坏结构的假想轮廓和对应于假想轮廓损坏的介质部分的介电损伤量是 存储在库中。

公开(公告)号：US20070233404A1

公开(公告)日：2007-10-04

申请号：US11395636

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： G06F19/00 ,  G01N21/00

CPC分类号： G01N21/95607

摘要： A method of creating a library for measuring a plurality of damaged structures formed on a semiconductor wafer using optical metrology includes directing an incident beam on a first damaged structure. The first damaged structure was formed by modifying at least one process parameter in a dual damascene procedure. A diffracted beam is received from the first damaged structure. A measured diffraction signal is obtained based on the received diffracted beam. A first simulated diffraction signal is calculated. The first simulated diffraction signal corresponds to a hypothetical profile of the first damaged structure. The hypothetical profile includes an undamaged dielectric portion and a damaged dielectric portion. The measured diffraction signal is compared to the first simulated diffraction signal. If the measured diffraction signal and the first simulated diffraction signal match within a matching criterion, then the first simulated diffraction signal, the hypothetical profile of the first damaged structure, and an amount of dielectric damage corresponding to the damaged dielectric portion of the hypothetical profile are stored in a library.

摘要翻译： 使用光学测量法创建用于测量形成在半导体晶片上的多个损坏结构的库的方法包括将入射光束引导到第一损坏结构上。 通过在双镶嵌程序中修改至少一个工艺参数来形成第一个损坏的结构。 从第一损坏结构接收衍射光束。 基于接收的衍射光束获得测量的衍射信号。 计算第一个模拟衍射信号。 第一模拟衍射信号对应于第一损坏结构的假想轮廓。 假想轮廓包括未损坏的电介质部分和损坏的电介质部分。 将测量的衍射信号与第一模拟衍射信号进行比较。 如果测量的衍射信号和第一模拟衍射信号在匹配标准内匹配，则第一模拟衍射信号，第一损坏结构的假想轮廓和对应于假想轮廓损坏的介质部分的介电损伤量是 存储在库中。

公开(公告)号：US20070229807A1

公开(公告)日：2007-10-04

申请号：US11396214

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： G01N21/00

CPC分类号： G01N21/95607 ,  G01N21/4788 ,  G01N21/9501 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.

摘要翻译： 一种使用光学测量法测量在半导体晶片上形成的损坏结构的方法，该方法包括从损坏的周期性结构获得测量的衍射信号。 定义损坏的周期结构的假设剖面。 具有未损坏部分的假想轮廓，其对应于损坏的周期性结构中的第一材料的未损坏区域，以及损坏部分，其对应于损坏的周期性结构中的第一材料的损坏区域。 未损伤部分和损坏部分具有与它们相关联的不同性质。 使用假设曲线计算假设损坏的周期性结构的模拟衍射信号。 将测得的衍射信号与模拟衍射信号进行比较。 如果测量的衍射信号和模拟衍射信号在匹配标准内匹配，则基于用于计算模拟衍射信号的假想轮廓的损坏部分建立损坏的周期性结构的损伤量。