发明申请
US20070235663A1 Insulator system for a terminal structure of an ion implantation system
有权
用于离子注入系统的端子结构的绝缘体系统
- 专利标题: Insulator system for a terminal structure of an ion implantation system
- 专利标题(中): 用于离子注入系统的端子结构的绝缘体系统
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申请号: US11394824申请日: 2006-03-31
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公开(公告)号: US20070235663A1公开(公告)日: 2007-10-11
- 发明人: Russell Low , Piortr Lubicki , D. Lischer , Steve Krause , Eric Hermanson , Joseph Olson
- 申请人: Russell Low , Piortr Lubicki , D. Lischer , Steve Krause , Eric Hermanson , Joseph Olson
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: G21G5/00
- IPC分类号: G21G5/00
摘要:
An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.
公开/授权文献
信息查询
IPC分类:
G | 物理 |
G21 | 核物理;核工程 |
G21G | 化学元素的转变;放射源 |
G21G5/00 | 通过化学反应进行化学元素的推断转变 |