公开(公告)号：US20070235663A1

公开(公告)日：2007-10-11

申请号：US11394824

申请日：2006-03-31

申请人： Russell Low ,  Piortr Lubicki ,  D. Lischer ,  Steve Krause ,  Eric Hermanson ,  Joseph Olson

发明人： Russell Low ,  Piortr Lubicki ,  D. Lischer ,  Steve Krause ,  Eric Hermanson ,  Joseph Olson

IPC分类号： G21G5/00

CPC分类号： H01J37/16 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/038

摘要： An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.

摘要翻译： 离子注入系统包括被配置为提供离子束的离子源，限定空腔的端子结构，至少部分地设置在空腔内的离子源和绝缘体系统。 绝缘体系统被配置为使端子结构电绝缘并且被配置为在靠近端子结构的至少一个外表面的区域中提供大于约72千伏（kV）/英寸的有效介电强度。 还提供了一种用于对离子注入系统的气体箱进行电绝缘的气体箱绝缘体系统。