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    Insulator system for a terminal structure of an ion implantation system
    1.
    发明申请
    Insulator system for a terminal structure of an ion implantation system 有权
    用于离子注入系统的端子结构的绝缘体系统

    公开(公告)号：US20070235663A1

    公开(公告)日：2007-10-11

    申请号：US11394824

    申请日：2006-03-31

    申请人： Russell Low ,  Piortr Lubicki ,  D. Lischer ,  Steve Krause ,  Eric Hermanson ,  Joseph Olson

    发明人： Russell Low ,  Piortr Lubicki ,  D. Lischer ,  Steve Krause ,  Eric Hermanson ,  Joseph Olson

    IPC分类号： G21G5/00

    CPC分类号： H01J37/16 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/038

    摘要： An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.

    摘要翻译： 离子注入系统包括被配置为提供离子束的离子源，限定空腔的端子结构，至少部分地设置在空腔内的离子源和绝缘体系统。 绝缘体系统被配置为使端子结构电绝缘并且被配置为在靠近端子结构的至少一个外表面的区域中提供大于约72千伏（kV）/英寸的有效介电强度。 还提供了一种用于对离子注入系统的气体箱进行电绝缘的气体箱绝缘体系统。

    Power supply for an ion implantation system
    4.
    发明授权
    Power supply for an ion implantation system 有权
    离子注入系统的电源

    公开(公告)号：US07576337B2

    公开(公告)日：2009-08-18

    申请号：US11620595

    申请日：2007-01-05

    申请人： Piotr Lubicki ,  Russell Low ,  Steve Krause ,  Eric Hermanson

    发明人： Piotr Lubicki ,  Russell Low ,  Steve Krause ,  Eric Hermanson

    IPC分类号： H01J37/08

    CPC分类号： H02M7/103

    摘要： A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.

    摘要翻译： 一种用于离子注入系统的电源系统。 在一个具体示例性实施例中，系统可以被实现为包括低功率逆变器，堆栈驱动器和从电力逆变器接收电力源的高压发电单元的电源系统。 高电压发生单元可以包括高压变压器，用于提供乘以期望输出电平并被输送到离子束加速器的输入端的输出功率。 供电系统还可以包括封装高压发电单元的至少一部分的电介质外壳，从而防止内部元件的分解强度的变化。

    Power Supply for an Ion Implantation System
    5.
    发明申请
    Power Supply for an Ion Implantation System 有权
    离子植入系统的电源

    公开(公告)号：US20080164408A1

    公开(公告)日：2008-07-10

    申请号：US11620595

    申请日：2007-01-05

    申请人： Piotr R. Lubicki ,  Russell Low ,  Steve Krause ,  Eric Hermanson

    发明人： Piotr R. Lubicki ,  Russell Low ,  Steve Krause ,  Eric Hermanson

    IPC分类号： H01J37/248 ,  H01F38/00

    CPC分类号： H02M7/103

    摘要： A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.

    摘要翻译： 一种用于离子注入系统的电源系统。 在一个具体示例性实施例中，系统可以被实现为包括低功率逆变器，堆栈驱动器和从电力逆变器接收电力源的高压发电单元的电源系统。 高电压发生单元可以包括高压变压器，用于提供乘以期望输出电平并被输送到离子束加速器的输入端的输出功率。 供电系统还可以包括封装高压发电单元的至少一部分的电介质外壳，从而防止内部元件的分解强度的变化。

    Terminal Structures Of An Ion Implanter Having Insulated Conductors With Dielectric Fins
    7.
    发明申请
    Terminal Structures Of An Ion Implanter Having Insulated Conductors With Dielectric Fins 有权
    具有绝缘导体的离子侵入体的端子结构

    公开(公告)号：US20090057572A1

    公开(公告)日：2009-03-05

    申请号：US11845441

    申请日：2007-08-27

    申请人： Kasegn D. Tekletsadik ,  Eric Hermanson ,  Doug May ,  Steve Krause ,  Russel John Low

    发明人： Kasegn D. Tekletsadik ,  Eric Hermanson ,  Doug May ,  Steve Krause ,  Russel John Low

    IPC分类号： G21K1/00

    CPC分类号： H01J37/3171 ,  H01J37/16 ,  H01J2237/038 ,  H01J2237/08

    摘要： Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.

    摘要翻译： 公开了具有绝缘导体和绝缘鳍片的离子注入机的端子结构。 在一个特定的示例性实施例中，离子注入机的端子结构可以用具有一个或多个介质翅片的绝缘导体来实现。 例如，离子注入机可以包括被配置为提供离子束的离子源。 离子注入机还可以包括限定空腔的端子结构，其中离子源可以至少部分地设置在空腔内。 离子注入机还可以包括绝缘导体，其具有靠近端子结构的外部部分设置的至少一个介电鳍片，以修改电场。

    Terminal structures of an ion implanter having insulated conductors with dielectric fins
    9.
    发明授权
    Terminal structures of an ion implanter having insulated conductors with dielectric fins 有权
    离子注入机的端子结构具有绝缘导体和介质翅片

    公开(公告)号：US07842934B2

    公开(公告)日：2010-11-30

    申请号：US11845441

    申请日：2007-08-27

    申请人： Kasegn D. Tekletsadik ,  Eric Hermanson ,  Doug May ,  Steve Krause ,  Russell John Low

    发明人： Kasegn D. Tekletsadik ,  Eric Hermanson ,  Doug May ,  Steve Krause ,  Russell John Low

    IPC分类号： G21K5/00

    CPC分类号： H01J37/3171 ,  H01J37/16 ,  H01J2237/038 ,  H01J2237/08

    摘要： Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.

    摘要翻译： 公开了具有绝缘导体和绝缘鳍片的离子注入机的端子结构。 在一个特定的示例性实施例中，离子注入机的端子结构可以用具有一个或多个介质翅片的绝缘导体来实现。 例如，离子注入机可以包括被配置为提供离子束的离子源。 离子注入机还可以包括限定空腔的端子结构，其中离子源可以至少部分地设置在空腔内。 离子注入机还可以包括绝缘导体，其具有靠近端子结构的外部部分设置的至少一个介电鳍片，以修改电场。