发明申请
- 专利标题: High Power Vcsels With Transverse Mode Control
- 专利标题(中): 具有横向模式控制的大功率Vcsel
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申请号: US10592999申请日: 2005-03-21
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公开(公告)号: US20070242716A1公开(公告)日: 2007-10-18
- 发明人: Nigamananda Samal , Shane Johnson , Yong-Hang Zhang
- 申请人: Nigamananda Samal , Shane Johnson , Yong-Hang Zhang
- 专利权人: Arizona Board of Regents, a body Corporation acting on behalf of Arizona State University
- 当前专利权人: Arizona Board of Regents, a body Corporation acting on behalf of Arizona State University
- 国际申请: PCT/US05/09478 WO 20050321
- 主分类号: H01S5/183
- IPC分类号: H01S5/183
摘要:
A single mode high power laser device such as a VCSEL is formed with two oxide apertures, one on each side of the active region or cavity. The sizes of the apertures and the distances from the apertures to the cavity center are chosen or optimum, near-Gaussian current density distribution. The high power of a VCSEL thus formed is improved still more by good heat removal by either formation of a via through the substrate and gold plating on top and bottom of the VCSEL (including the via) or by lifting the VCSEL structure from the substrate and locating it on a heat sink.