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12 条记录 (耗时 0.016 秒)

    InP-Based Multi-Junction Photovoltaic and Optoelectronic Devices
    1.
    发明申请
    InP-Based Multi-Junction Photovoltaic and Optoelectronic Devices 审中-公开
    基于InP的多结光伏和光电器件

    公开(公告)号：US20120073638A1

    公开(公告)日：2012-03-29

    申请号：US13238847

    申请日：2011-09-21

    申请人： Yong-Hang Zhang ,  Ding Ding

    发明人： Yong-Hang Zhang ,  Ding Ding

    IPC分类号： H01L29/267 ,  H01L31/0328

    CPC分类号： H01L31/0687 ,  H01L31/02966 ,  H01L31/03046 ,  Y02B10/10 ,  Y02E10/544

    摘要： Lattice-matched II-VI (ZnCdHg)(SeTe) and III-V (InGaAsP) semiconductors grown on InP substrates can be used for preparing multi junction solar cells that can potentially reach efficiencies greater than 40% under one sun. For example, a semiconductor structure can be prepared comprising, an InP substrate; an optional InGaAsP building block formed over the InP substrate; an InP building block formed over either the InGaAsP building block, when present, or the InP substrate and at least one (ZnCdHg)(SeTe) building block formed over the InP building block.

    摘要翻译： 在InP衬底上生长的晶格匹配的II-VI（ZnCdHg）（SeTe）和III-V（InGaAsP））半导体可用于制备在一个太阳下潜在地达到40％以上的效率的多结太阳能电池。 例如，可以制备半导体结构，其包括：InP衬底; 形成在InP衬底上的可选InGaAsP结构单元; 形成在InGaAsP结构单元上，当存在时，或InP衬底和至少一个（ZnCdHg）（SeTe）构件块形成在InP构件上的InP构件块。

    High Power Vcsels With Transverse Mode Control
    2.
    发明申请
    High Power Vcsels With Transverse Mode Control 审中-公开
    具有横向模式控制的大功率Vcsel

    公开(公告)号：US20070242716A1

    公开(公告)日：2007-10-18

    申请号：US10592999

    申请日：2005-03-21

    申请人： Nigamananda Samal ,  Shane Johnson ,  Yong-Hang Zhang

    发明人： Nigamananda Samal ,  Shane Johnson ,  Yong-Hang Zhang

    IPC分类号： H01S5/183

    CPC分类号： H01S5/1833 ,  H01S5/0207 ,  H01S5/02469 ,  H01S5/18311 ,  H01S5/18313 ,  H01S2301/166 ,  H01S2301/20

    摘要： A single mode high power laser device such as a VCSEL is formed with two oxide apertures, one on each side of the active region or cavity. The sizes of the apertures and the distances from the apertures to the cavity center are chosen or optimum, near-Gaussian current density distribution. The high power of a VCSEL thus formed is improved still more by good heat removal by either formation of a via through the substrate and gold plating on top and bottom of the VCSEL (including the via) or by lifting the VCSEL structure from the substrate and locating it on a heat sink.

    摘要翻译： 诸如VCSEL的单模高功率激光器件形成有两个氧化物孔，一个在有源区或空腔的每一侧上。 选择孔径的尺寸以及从孔到腔中心的距离或最佳的近似高斯电流密度分布。 通过在VCSEL（包括通孔）的顶部和底部形成通孔以及通过衬底的顶部和底部的金镀层或者通过从衬底提升VCSEL结构，通过良好的散热来改善如此形成的VCSEL的高功率，以及 将其放在散热器上。

    Two-terminal multi-color photodetectors and focal plane arrays
    3.
    发明授权
    Two-terminal multi-color photodetectors and focal plane arrays 有权
    双端多色光电探测器和焦平面阵列

    公开(公告)号：US08350208B1

    公开(公告)日：2013-01-08

    申请号：US13011475

    申请日：2011-01-21

    申请人： Yong-Hang Zhang ,  Ding Ding ,  Elizabeth Steenbergen

    发明人： Yong-Hang Zhang ,  Ding Ding ,  Elizabeth Steenbergen

    IPC分类号： H01J31/00 ,  H01J40/14

    CPC分类号： H01L27/14647 ,  H01L27/14636 ,  H01L31/0687 ,  H01L31/0725

    摘要： Two-terminal multi junction photodetectors and focal plane arrays for multi-color detection or imaging acquisition can be formed by connecting photodiodes with different bandgaps or wavelengths, through tunnel diodes, in series with the same polarization. Under reverse bias in the dark, the total current going through such multi junction photodetectors is dictated by the smallest reverse saturation current of the photodiodes. When in operating mode, a set of light sources with different wavelengths corresponding to each individual photodiode can be used to optically bias all the photodiodes except the detecting photodiode Under illumination, all other photodiodes work in the photovoltaic mode and have much higher maximum possible reverse currents than the detecting photodiode. As a result, the total current of the multi junction photodetector is dictated by the detecting photodiode. Therefore, a total current can be read by, for example, read-out circuits to give the optical signal strength at that specific wavelength of the detecting photodiode. By using an algorithm one can use such multi junction photodetectors to detect different wavelengths and to take multicolor images.

    摘要翻译： 可以通过连接具有不同带隙或波长的光电二极管，通过隧道二极管与相同的极化串联，形成用于多色检测或成像采集的两端多结光电探测器和焦平面阵列。 在黑暗中的反向偏置下，通过这种多结光电探测器的总电流由光电二极管的最小反向饱和电流决定。 当处于工作模式时，可以使用一组与各个光电二极管相对应的具有不同波长的光源来光学偏置检测光电二极管外的所有光电二极管。在照明下，所有其他光电二极管工作在光伏模式，并具有高得多的最大可能反向电流 比检测光电二极管。 结果，多结光电检测器的总电流由检测光电二极管决定。 因此，可以通过例如读出电路来读取总电流，以在检测光电二极管的特定波长处给出光信号强度。 通过使用算法，可以使用这种多结光电探测器来检测不同波长并采取多色图像。

    Long wavelength pseudomorphic InGaNPAsSb type-I and type-II active layers for the gaas material system
    4.
    发明授权
    Long wavelength pseudomorphic InGaNPAsSb type-I and type-II active layers for the gaas material system 失效
    用于Gaas材料系统的长波长伪晶InGaNPAsSb型-I和II型活性层

    公开(公告)号：US06859474B1

    公开(公告)日：2005-02-22

    申请号：US10129061

    申请日：2000-11-01

    申请人： Shane Johnson ,  Philip Dowd ,  Wolfgang Braun ,  Yong-Hang Zhang ,  Chang-Zhi Guo

    发明人： Shane Johnson ,  Philip Dowd ,  Wolfgang Braun ,  Yong-Hang Zhang ,  Chang-Zhi Guo

    IPC分类号： H01L29/06 ,  H01L31/0304 ,  H01L31/0352 ,  H01L33/00 ,  H01S5/00 ,  H01S5/183 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L31/03046 ,  H01L31/035236 ,  H01S5/183 ,  H01S5/32366 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/3422 ,  H01S5/34306 ,  H01S5/3434 ,  Y02B10/10 ,  Y02E10/544

    摘要： The invention discloses improved structures of light-processing (e.g. light-emitting and light-absorbing/sensing) devices, in particular Vertical Cavity Surface Emitting Lasers (VCSELs), such as may find use in telecommunications applications. The disclosed VSCAL devices and production methods provide for an active region having a quantum well structure grown on GaAs-containing substrates, thus providing processing compatibility for light having wavelength in the range 1.0 to 1.6 μm. The active region structure combines strain-compensating barriers with different band alignments in the quantum wells to achieve a long emission wavelength while at the same time decreasing the strain in the structure. The improved functioning of the devices disclosed results from building them with multicomponent alloy layers having a large number of constituents. The invention discloses as a key constituent in the proposed alloy layers for the active region a substance, such as nitrogen (N), suitable for reducing bandgap energy (i.e., increasing light wavelength) associated with the layers while at the same time lowering the lattice constant associated with the structure and hence lowering strain.

    摘要翻译： 本发明公开了光处理（例如发光和光吸收/感测）装置，特别是垂直腔面发射激光器（VCSEL）的改进的结构，例如可用于电信应用。 所公开的VSCAL器件和制造方法提供了在含GaAs衬底上生长的量子阱结构的有源区，从而为波长为1.0-1.6μm的光提供处理兼容性。 有源区结构将应变补偿屏障与量子阱中的不同带对准结合在一起，以实现长发射波长，同时降低结构中的应变。 所公开的装置的改进的功能通过用具有大量成分的多组分合金层来构建它们。 本发明公开了所提出的合金层中关键成分的一种物质，如氮（N），适用于降低与层相关的带隙能（即增加光波长），同时降低晶格 常数与结构相关，从而降低应变。

    Low-Cost and High-Efficiency Tandem Photovoltaic Cells
    6.
    发明申请
    Low-Cost and High-Efficiency Tandem Photovoltaic Cells 审中-公开
    低成本和高效率的串联光伏电池

    公开(公告)号：US20160181456A1

    公开(公告)日：2016-06-23

    申请号：US14978323

    申请日：2015-12-22

    申请人： Yong-Hang Zhang

    发明人： Yong-Hang Zhang

    IPC分类号： H01L31/0725 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/0376

    CPC分类号： H01L31/0725 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/0368 ,  H01L31/0376 ,  Y02E10/50

    摘要： Tandem solar cells are provided that are more cost-efficient manner and can reach much higher power conversion efficiency compared to previous technologies. In some aspects, a tandem solar cell includes a first subcell configured to absorb a first portion of a solar spectrum, wherein at least one layer of the first subcell is polycrystalline, and a second subcell configured to absorb a second portion of the solar spectrum, wherein the second subcell is electrically connected to the first subcell through a conductive contact, and includes at least one textured surface.

    摘要翻译： 提供串联太阳能电池，其具有更高的成本效益，并且与先前的技术相比可以达到更高的功率转换效率。 在一些方面，串联太阳能电池包括被配置为吸收太阳光谱的第一部分的第一子电池，其中第一子电池的至少一层是多晶的，而第二子电池被配置为吸收太阳光谱的第二部分， 其中所述第二子电池通过导电触点电连接到所述第一子电池，并且包括至少一个有纹理的表面。