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US20070246439A1 Gap filling method, method for forming semiconductor memory device using the same, and semiconductor device having a filled gap 失效
间隙填充方法，使用其的半导体存储器件的形成方法以及具有填充间隙的半导体器件

Gap filling method, method for forming semiconductor memory device using the same, and semiconductor device having a filled gap
摘要：
A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.
摘要（中）：

一种间隙填充方法和一种形成存储器件的方法，包括在衬底上形成绝缘层，在绝缘层中形成间隙区域，并重复形成相变材料层，并蚀刻相变材料层以形成相 在间隙区域中改变材料层图案。

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