A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and n+ type semiconductor region is selectively removed, a Co film is deposited over the substrate and a CoSi2 layer is formed over the n+ type semiconductor region and the gate electrode by applying a heat treatment to the substrate. After a silicon nitride film is deposited over the substrate and an aperture reaching the substrate is formed by removing the silicon nitride-film and the silicon oxide film at the anode formation part of the Schottky barrier diode, a Ti film is deposited over the substrate including the inside of the aperture, and a TiSi2 layer which becomes an anode electrode of the Schottky-barrier diode is formed at the bottom of the aperture by applying a heat treatment to the substrate.